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CSD16321Q5C

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See Product Specifications

Mouser #:

595-CSD16321Q5C

Mfr. #:

CSD16321Q5C

Mfr.:

Texas Instruments
Texas Instruments

Description:

MOSFETs DualCool N-Channel NexFET Power MOSFET

Lifecycle:

Obsolete

Datasheet:

CSD16321Q5C Datasheet

ECAD Model:

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Shipping Alert:

Mouser does not presently sell this product in your region.

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Possible Replacement

Mfr.:

Texas Instruments

Mfr. #:

CSD16321Q5

Description:

MOSFETs N-Channel NexFET Pow er MOSFET

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Texas Instruments
Product Category:	MOSFETs
Shipping Restrictions:	Mouser does not presently sell this product in your region.
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package / Case:	VSON-CLIP-8
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	25 V
Id - Continuous Drain Current:	100 A
Rds On - Drain-Source Resistance:	2.4 mOhms
Vgs - Gate-Source Voltage:	- 8 V, + 8 V
Vgs th - Gate-Source Threshold Voltage:	900 mV
Qg - Gate Charge:	14 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	3.1 W
Channel Mode:	Enhancement
Tradename:	NexFET
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Texas Instruments
Configuration:	Single
Fall Time:	17 ns
Forward Transconductance - Min:	150 S
Height:	1 mm
Length:	6 mm
Product Type:	MOSFETs
Rise Time:	15 ns
Series:	CSD16321Q5C
Factory Pack Quantity:	2500
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	27 ns
Typical Turn-On Delay Time:	9 ns
Width:	5 mm
Unit Weight:	0.004773 oz

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Filter Document:

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Product Catalogs

Power Management Guide 2018 (Rev. R)

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USHTS:: 8541290095
CNHTS:: 8541290000
CAHTS:: 8541290000
JPHTS:: 8541290100
KRHTS:: 8541299000
TARIC:: 8542399000
MXHTS:: 85423999
ECCN:: EAR99

Texas Instruments NexFET™ Power MOSFET

The Texas Instruments N-Channel NexFET™ Power MOSFET series features low on resistance coupled with extremely low gate charge, making it ideal for high efficiency/high frequency switching converter and Synchronous FET applications. The TI NexFET Power MOSFET combines vertical current flow with a lateral power MOSFET for a level of performance not previously possible with existing silicon platforms. The TI NexFET minimizes losses in power conversion applications and allows designers to achieve 90-percent power supply efficiencies from light to full loads with high output currents and low duty cycles.