IRLML0030TRPBF

Infineon Technologies
942-IRLML0030TRPBF
IRLML0030TRPBF

Mfr.:

Description:
MOSFETs MOSFT 30V 5.2A 28mOhm 3.6nC Qg

Datasheet:
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In Stock: 205,096

Stock:
205,096 Can Ship Immediately
Factory Lead-Time:
2 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
$-.--
Ext. Price:
$-.--
Est. Tariff:
Packaging:
Full Reel (Order in multiples of 3000)

Pricing (USD)

Qty. Unit Price
Ext. Price
Cut Tape / MouseReel™ †
$0.44 $0.44
$0.269 $2.69
$0.161 $16.10
$0.148 $74.00
$0.132 $132.00
Full Reel (Order in multiples of 3000)
$0.08 $240.00
$0.079 $474.00
$0.076 $684.00
† $7.00 MouseReel™ fee will be added and calculated in your shopping cart. All MouseReel™ orders are non-cancellable and non-returnable. ↩

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USHTS:
8541290095
CNHTS:
8541290000
CAHTS:
8541290000
JPHTS:
8541290100
KRHTS:
8541299000
TARIC:
8541290000
MXHTS:
85412999
ECCN:
EAR99

Resonant Wireless Charging - Consumer Applications

Infineon Technologies Resonant Wireless Charging - Consumer Applications takes the lead in fast switching in power transfer topologies. With excellent figure of merit (FOM) for gate charge times, RDS(on) and Coss, these charging solutions enable 6.78MHz inverter designs. Advanced power MOSFET technology addresses frequency switching implementations, especially in the 30-10V areas for class D inverter designs and in the 150-250V voltage class for class E inverter designs.

Wireless Charging Solutions

Infineon Wireless Charging Solutions meet today's growing demand for wireless charge applications like smartphones, wearables, notebooks, and low-voltage drive devices. Infineon's highly efficient and cost-effective devices enable state-of-the-art solutions for the transmitter unit for inductive and resonant standards. Infineon devices are ready-to-use for the adapter/charger, fostering time-to-market of full wireless charging solutions. Infineon is a member of the Wireless Power Consortium and the AirFuel Alliance.

30V HEXFET® Power MOSFETs

Infineon 30V HEXFET® Power MOSFETs are designed for high density applications requiring small size, high efficiency and improved thermal conduction, making them ideally suited for notebook applications and point-of-load (POL) converters used in servers, as well as advanced telecom and datacom systems. These 30V HEXFET Power MOSFETs offer significant gate oxide improvement over previous generations and provide high performance as part of a system-wide solution to optimize 12VIN / 1V to 3VOUT DC-DC synchronous buck converter applications. 

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