ISSI LPDDR4 & LPDDR4X Mobile SDRAM
ISSI LPDDR4 and LPDDR4X SDRAM are low-voltage memory devices available in 2Gb, 4Gb, and 8Gb densities. The low-voltage cores and I/O power requirements make these devices ideal for mobile applications. The ISSI LPDDR4 and LPDDR4X SDRAM offer a clock frequency range from 1333MHz to 1600MHz and data rates up to 3200Mbps per I/O. These devices are configured with eight internal banks per channel for concurrent operation. The LPDDR4 and LPDDR4X feature programmable read and write latencies in programmable and "on-the-fly" burst lengths.
The ISSI LPDDR4 and LPDDR4X SDRAM use a double-data-rate architecture to achieve high-speed operation. The double data rate architecture is a 16n prefetch architecture with an interface designed to transfer two data words per clock cycle at the I/O pins. These devices offer fully synchronous operations referenced to both rising and falling edges of the clock. The data paths are internally pipelined and 16n bits prefetched to achieve very high bandwidth.
Features
- Low-voltage supplies
- 1.8V (LPDDR4
- 1.1V (LPDDR4X)
- Low voltage I/O
- 1.1V (LPDDR4)
- 0.6V (LPDDR4X)
- 1333MHz to 1600MHz frequency range
- 20Mbps to 3200Mbps per I/O data rate
- 16n pre-fetch DDR architecture
- Eight internal banks per channel for concurrent operation
- Multiplexed, double data rate, command/address inputs
- Mobile features for lower power consumption
- Programmable read and write latencies
- Programmable and on-the-fly burst length (BL = 16 or 32)
- On-chip temperature sensor for efficient self-refresh control
- ZQ Calibration
- Adjustable drive strength
- Partial Array Self Refresh (PASR)
- 10mm x 14.5mm BGA-200 package
Applications
- Mobile computing
- Tablets
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