STMicroelectronics M95P08-x Ultra-Low-Power Serial SPI Page EEPROMs
STMicroelectronics M95P08-x Ultra-Low-Power Serial SPI Page EEPROMs feature advanced proprietary NVM technology. M95P08-x offers byte flexibility, page alterability, high page cycling performance, and ultralow power consumption equivalent to EEPROM technology. These 8-Mbit SPI page EEPROM devices are organized as 2048 programmable pages of 512 bytes each and are accessible through an SPI bus with high-performance dual- and quad SPI outputs. The devices offer two additional (identification) 512-byte pages: one contains identification data and, upon request, the UID; the second can be used to store sensitive application parameters (can be permanently locked in read-only mode). Additional status, configuration, and volatile registers set the desired device configuration, while the safety register provides information on the device status.
M95P08-I operates with a supply voltage from 1.6 to 3.6 V over an ambient temperature range of -40°C to +85°C. The M95P08-E offers a -40°C to +105°C extended temperature range and supports a clock frequency of up to 80MHz. STMicroelectronics M95P08-x Page EEPROMs feature byte and page write instructions of up to 512 bytes. The write instructions consist of self-timed auto-erase and program operations, resulting in flexible data byte management. Page/block/sector/chip erase commands are also accepted and set the memory to an erased state. Memory can then be fast-programmed by 512-byte pages and further optimized using the Page program with buffer load instruction to hide the SPI communication latency.
Features
- Interface
- Supports serial peripheral interface (SPI) and dual/quad outputs
- Wide 1.6V to 3.6V range
- Temperature ranges
- -40°C to +85°C industrial
- -40°C to +105°C extended
- Read
- 50MHz read for single output
- 80MHz fast read for single/dual/quad output with one dummy byte
- Memory
- 8 Mbits of page EEPROM
- 64-Kbyte blocks, 4-Kbyte sectors
- 512 bytes page size
- 2x identification pages
- 500k cycles write endurance in the full temperature range
- Data retention
- 100 years
- 10 years after 500k cycles
- 8 Mbits of page EEPROM
- Ultra-low power consumption
- 0.6μA typical in Deep power-down mode
- 16μA typical in Standby mode
- 800μA typical for Read single at 10MHz
- 1.5mA typical for page write
- Current peak control of <3mA
- High write/erase performance
- Fast write/program/erase times
- 2ms typical for Byte and Page write (includes auto-erase and program) for 512 bytes
- 1.2ms typical for Page program (512 bytes)
- 1.1ms typical for Page erase
- 1.3ms typical for sector erase
- 4ms typical for block erase
- 4ms typical for chip erase
- Page program with buffer load
- Fast write/program/erase times
- ECC for high memory reliability (DEC, TED)
- Schmitt trigger inputs for noise filtering
- Output buffer programmable strength
- Operating status flags for ISO26262
- Software reset
- Write protection by block, with a top/bottom option
- Unique ID upon request
- Electronic identification
- Supports SFDP (serial flash discoverable parameters) mode
- JEDEC standard manufacturer identification
- Enhanced ESD protection HBM (human body model)
- ECOPACK2 type 2mm x 3mm DFN8, SO8N, or WLCSP8 packages
- Halogen-free and RoHS compliant
Applications
- Wearables
- Smartwatches
- Fitness trackers
- Asset tracking
- Goods guarantee
- Real-time monitoring
- Medical and healthcare
- Hearing aids
- Glucose meters
- Blood pressure monitors
- Implantable devices
Videos
Block Diagram
Complete Your Design
STMicroelectronics Standard Products
A broad range of drop-in replacements for general-purpose analog ICs, discretes, and serial EEPROMs.