SkyHigh Memory S34ML0xGx SLC NAND Flash Memory
SkyHigh Memory S34ML0xGx SLC NAND Flash Memory is the first family of Single-Level Cell (SLC) NAND products using 4x nm floating-gate technology, targeted specifically for data storage in automotive, consumer, and networking applications. The SLC NAND is offered in densities from 1Gb to 8Gb, in 3.0V and 1.8V families that feature high performance, extended temperature range, long-term product support, and stringent reliability demands, such as 1-bit, 4-bit Error Correction Code (ECC). The NAND cell provides the most cost-effective solution for the solid-state mass storage market. The memory is divided into blocks that can be erased independently so it is possible to preserve valid data while old data is erased.
Features
- 1Gbit, 2Gbit, 4Gbit, 8Gbit densities
- Architecture
- 8-bits input/output bus width
- (2048 + 64) bytes page size, 64 bytes is a spare area
- 64 pages or (128k + 4k) bytes block size
- Plane size
- 1Gbit / 2Gbit 1024 Blocks per Plane or (128M + 4M) bytes
- 4Gbit / 8Gbit 2048 Blocks per Plane or (256M + 8M) bytes
- Device size
- 1Gbit: 1 Plane per Device or 128Mbyte
- 2Gbit: 2 Planes per Device or 256Mbyte
- 4Gbit: 2 Planes per Device or 512Mbyte
- 8Gbit: 2 Planes per Device or 512Mbyte
- NAND Flash interface
- Standard NAND signal interface and command set
- Address, Data, and Commands multiplexed
- Supply voltage
- ML Series: 3.3V
- MS Series: 1.8V
- Security
- One Time Programmable (OTP) area
- Serial number (unique ID)
- Hardware program/erase disabled during power transition
- Additional Features
- 2Gb/4Gb and 8Gb parts support Multiplane Program and Erase commands
- Supports Copy Back Program
- 2Gb/4Gb and 8Gb parts support Multiplane Copy Back Program
- Supports Read Cache
- Manufacturer ID electronic signature: 01h
- Industrial -40°C to +85°C operating temperature range
- Page Read / Program
- 25μs (max) random access
- 25ns (max) sequential access
- 200μs (typ) program time / multiplane program time
- 2.0ms (typ) block erase (S34ML01G1) time
- 3.5ms (typ) block erase / multiplane erase (S34ML02G1, S34ML04G1, and S34ML08G1) time
- Reliability
- 100,000 program / erase cycles (typ), with 1bit / 512 + 16 byte ECC
- 10-year data retention (typ)
- Block zero is a valid block and will be valid for at least 1000 program-erase cycles
Applications
- Automotive systems
- Infotainment and navigation systems
- Advanced Driver Assistance Systems (ADAS)
- Digital instrument clusters
- Consumer electronics
- Set-top boxes
- Smart TVs
- Digital cameras and camcorders
- Networking equipment
- Routers and switches
- Network-Attached Storage (NAS)
- Base stations and gateways
- Industrial control
- Programmable Logic Controllers (PLCs)
- Human-Machine Interfaces (HMIs)
- Data loggers and industrial sensors
- Embedded systems
- Boot code storage
- Firmware and configuration data
- Secure storage for unique device identifiers
Resources
Block Diagram
Array Organization
View Results ( 14 ) Page
| Part Number | Datasheet | Description |
|---|---|---|
| S34ML08G201BHI000 |  |
NAND Flash SLC,8Gb,3x,3V,x8,4bit,VLD63, |
| S34ML02G300TFI000 | |
NAND Flash 0BIT ECC, X8 I/O AND 3V VCC SLC NAND FLASH MEMORY 2KB PAGE SIZE TSOP (2Gb die) |
| S34ML08G201BHV000 | |
NAND Flash SLC,8Gb,3x,3V,x8,4bit,VLD63, |
| S34ML02G300TFI003 | |
NAND Flash 0BIT ECC, X8 I/O AND 3V VCC SLC NAND FLASH MEMORY 2KB PAGE SIZE TSOP (2Gb die) |
| S34ML08G201TFI000 | |
NAND Flash SLC,8Gb,3x,3V,x8,4bit,TS248, |
| S34ML04G300TFI000 | |
NAND Flash SLC,4Gb,1x,3V,x8,1bit,TS48, |
| S34ML08G201TFV000 | |
NAND Flash SLC,8Gb,3x,3V,x8,4bit,TS248, |
| S34ML04G200BHI000 | |
NAND Flash SLC,4Gb,3x,3V,x8,4bit,VBM63, |
| S34ML04G300TFI003 | |
NAND Flash SLC,4Gb,1x,3V,x8,1bit,TS48, |
| S34ML08G301BHI000 | |
NAND Flash SLC,8Gb,1x,3V,x8,1bit,VLD63, |
Published: 2012-07-05
| Updated: 2025-05-20