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onsemi FDC642P-F085 Small Signal MOSFET

onsemi FDC642P-F085 Small Signal MOSFET offers a high-performance trench technology for extremely low RDS(on) and fast switching speed. This MOSFET features a typical low gate charge of 6.9nC, a drain-to-source voltage of -20V, a gate-to-source voltage of ±8V, and a power dissipation of 1.2W. The FDC642P-F085 small signal MOSFET is available in a SUPERSOT™-6 package, featuring a 72% smaller footprint than the standard SO-8 and a 1mm thick, low-profile design. This small-signal MOSFET is Pb-free, RoHS compliant, AEC-Q101 qualified, and PPAP capable. Typical applications include a load switch, battery protection, and power management.

Features

  • Typical RDS(on) = 52.5mΩ at VGS = -4.5V, ID = -4A
  • Typical RDS(on) = 75.3mΩ at VGS = -2.5V, ID = -3.2A
  • Fast switching speed
  • 6.9nC typical low gate charge
  • High-performance trench technology for extremely low RDS(on)
  • SUPERSOT™–6 package:
    • 72% smaller than standard SO-8 small footprint
    • 1mm thick low profile
  • RoHS-compliant and Pb-free
  • AEC-Q101 qualified and PPAP capable

Applications

  • Load switch
  • Battery protection
  • Power management

Specifications

  • -20V drain to source voltage
  • ±8V gate to source voltage
  • 1.2W power dissipation
  • -55°C to 150°C operating and storage temperature range

Typical Characteristics Curve

Performance Graph - onsemi FDC642P-F085 Small Signal MOSFET

Additional Resource

Applications Notes

Published: 2025-11-19 | Updated: 2025-11-27