RGT80TS65DGC13

ROHM Semiconductor
755-RGT80TS65DGC13
RGT80TS65DGC13

Mfr.:

Description:
IGBTs TO247 650V 40A TRNCH

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Product Attribute Attribute Value Select Attribute
ROHM Semiconductor
Product Category: IGBTs
RoHS:  
Si
TO-247GE-3
Through Hole
Single
650 V
2.1 V
30 V
70 A
234 W
- 40 C
+ 175 C
Tube
Brand: ROHM Semiconductor
Gate-Emitter Leakage Current: 200 nA
Product Type: IGBTs
Factory Pack Quantity: 600
Subcategory: Transistors
Part # Aliases: RGT80TS65D
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Compliance Codes
USHTS:
8541290065
CAHTS:
8541290000
TARIC:
8541290000
MXHTS:
8541299900
ECCN:
EAR99
Origin Classifications
Country of Origin:
Thailand
Assembly Country of Origin:
Not available
Country of Diffusion:
Not available
The country is subject to change at the time of shipment.

Field Stop Trench IGBTs

ROHM Field Stop Trench IGBTs are energy-saving, high-efficiency IGBTs used in a wide range of high-voltage and high-current applications. These IGBTs feature a low collector and emitter saturation voltage, short-circuit that withstands time, and built-in very fast and soft recovery FRD. The field stop trench IGBTs are ideal for UPS, power conditioners, welder, and general inverters for industrial use.

In Stock: 594

Stock:
594 Can Ship Immediately
Factory Lead-Time:
22 Weeks Estimated factory production time for quantities greater than shown.
Quantities greater than 594 will be subject to minimum order requirements.
Minimum: 1   Multiples: 1
Unit Price:
$-.--
Ext. Price:
$-.--
Est. Tariff:

Pricing (USD)

A tariff of 20% may be applied if shipping to the United States.
Qty. Unit Price
Ext. Price
$12.35 $12.35
$8.58 $85.80
$6.45 $645.00
600 Quote