STGP4M65DF2

STMicroelectronics
511-STGP4M65DF2
STGP4M65DF2

Mfr.:

Description:
IGBTs Trench Gate IGBT M Series 650V 4A

ECAD Model:
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Product Attribute Attribute Value Select Attribute
STMicroelectronics
Product Category: IGBTs
RoHS:  
Si
TO-220-3
Through Hole
Single
650 V
1.6 V
- 20 V, 20 V
8 A
68 W
- 55 C
+ 175 C
STGP4M65DF2
Tube
Brand: STMicroelectronics
Continuous Collector Current Ic Max: 8 A
Gate-Emitter Leakage Current: 250 uA
Product Type: IGBTs
Factory Pack Quantity: 2000
Subcategory: Transistors
Unit Weight: 0.063493 oz
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Attributes selected: 0

Compliance Codes
USHTS:
8541290065
CNHTS:
8541290000
CAHTS:
8541290000
JPHTS:
8541290100
KRHTS:
8541299000
TARIC:
8541290000
MXHTS:
8541299900
ECCN:
EAR99
Origin Classifications
Country of Origin:
China
Assembly Country of Origin:
Not available
Country of Diffusion:
Not available
The country is subject to change at the time of shipment.

Availability

Stock:
0

You can still purchase this product for backorder.

On Order:
2,000
Expected 2/5/2027
Factory Lead-Time:
20
Weeks Estimated factory production time for quantities greater than shown.
Quantities greater than 2000 will be subject to minimum order requirements.
Minimum: 1   Multiples: 1
Unit Price:
$-.--
Ext. Price:
$-.--
Est. Tariff:

Pricing (USD)

A tariff of 38% may be applied if shipping to the United States.
Qty. Unit Price
Ext. Price
$1.81 $1.81
$1.13 $11.30
$0.749 $74.90
$0.594 $297.00
$0.528 $528.00
$0.482 $964.00
$0.464 $1,856.00
$0.448 $4,480.00