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Vishay SiR680ADP N-Channel (D-S) MOSFET

Vishay SiR680ADP N-Channel (D-S) MOSFET is a TrenchFET® Gen IV power MOSFET featuring low RDS - Qg Figure Of Merit (FOM). This MOSFET is tuned for the lowest RDS to Qoss FOM and 100% Rg and UIS tested. The SiR680ADP MOSFET operates at -55°C to 150°C temperature range. This MOSFET functions at 80V drain-source voltage, ± 20V gate-source voltage, and 125A pulse drain current. The SiR680ADP MOSFET comes with the PowerPAK SO-8 package. This MOSFET is ideal for use in synchronous rectification primary side switch, DC/DC converters, OR-ing, power supplies, and motor drive control.

Features

  • TrenchFET® Gen IV power MOSFET
  • Very low RDS - Qg Figure Of Merit (FOM)
  • Single configuration
  • Tuned for the lowest RDS - Qoss FOM
  • 100% Rg and UIS tested
  • PowerPAK SO-8 package

Specifications

  • -55°C to 150°C operating temperature range
  • 80V drain-source voltage
  • ±20V gate-source voltage
  • 125A pulse drain current

Applications

  • Synchronous rectification
  • Primary side switch
  • DC/DC converters
  • OR-ing
  • Power supplies
  • Motor drive control
  • Battery and load switch

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Vishay SiR680ADP N-Channel (D-S) MOSFET

Associated Product

TrenchFET® Gen IV MOSFETs

Vishay / Siliconix TrenchFET® Gen IV MOSFETs

Offers an industry-low on-resistance down to 1.35mΩ at 4.5V.

Learn Moreabout Vishay / Siliconix TrenchFET® Gen IV MOSFETs View Productsrelated to Vishay / Siliconix TrenchFET® Gen IV MOSFETs
Published: 2020-06-16 | Updated: 2022-03-11