Vishay Semiconductors IR Emitters & Silicon PIN Photodiode
Vishay Semiconductors IR Emitters & Silicon PIN Photodiodes are high-speed 830nm to 950nm infrared emitters and package-matched high-speed silicon PIN photodiodes with high radiant sensitivity from 1mW/sr to 1800 mW/sr. Rise and fall times range from 2.5ns to 1000ns. Vishay offers double heterojunction infrared emitters with the lowest forward voltages on the market and highly efficient homojunction emitters. Vishay also offers the broadest selection of high-speed, low dark current PIN photodiodes that are specifically designed to achieve excellent sensitivity together with high reliability.
Features
- Photodiode
- High radiant sensitivity from 1mW/sr to 1800mW/sr
- Daylight blocking filter matched with 830 to 950nm IR Emitters
- Reverse light current of 3μA
- Low dark current of 1nA
- 920nm wavelength of peak sensitivity
- Low 0.1%/K temperature coefficient of light current
- Compact package measures 3x2mm with a height of only 1mm
- Ultra-wide ±75º angle of half intensity
- Floor life of 168 hours and moisture sensitivity level (MSL) of 3 following J-STD-020
- Support lead (Pb)-free reflow soldering
- Conform to Vishay's "green" standards
- IR Emitters
- Peak wavelengths of 830nm and 950nm
- Clear, untinted plastic packages
- High radiant sensitivity from 1mW/sr to 1800mW/sr
- Fast switching times of 15ns
- GaAIAs multi-quantum well (MQW) and double hetero (DH) technology
- Low forward voltage down to 1.3V typical
Applications
- IR touch panels for devices
- Printer displays
- eBook readers
- Smartphones
- Tablets
- Ultrabooks
- GPS units
- High power emitters for limited spaces
- High performance transmissive or reflective sensors
Infographic - PhotodIodes
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