Transphorm 650V GaN FETs in TO-247 Packages
Transphorm 650V GaN FETs in TO-247 Packages combine state-of-the-art high-voltage GaN HEMT and low-voltage silicon MOSFET technologies. The devices offer superior reliability and performance with improved efficiency over silicon. Transphorm FETs have a lower gate charge, lower crossover loss, and a smaller reverse recovery charge.
Features
- JEDEC qualified GaN technology
- Dynamic RDS(on)eff production tested
- Robust design, defined by
- Intrinsic lifetime tests
- Wide gate safety margin
- Transient over-voltage capability
- Very low QRR
- Reduced crossover loss
- RoHS compliant and Halogen-free packaging
- Enables AC-DC bridgeless totem-pole PFC designs
- Increased power density
- Reduced system size and weight
- Overall lower system cost
- Achieves increased efficiency in both hard- and soft-switched circuits
- Easy to drive with commonly-used gate drivers
- GSD pin layout improves the high-speed design
Applications
- Datacom
- Broad industrial
- PV inverter
- Servo motor
Videos
Additional Resources
- Characteristics of Transphorm GaN Power FETs
- Printed Circuit Board Layout and Probing for GaN FETs
- Designing Hard-switched Bridges with GaN
- VGS Transient Tolerance of Transphorm GaN FETs
- Drain Voltage and Avalanche Ratings for GaN FETs
- Recommended External Circuitry for Transphorm GaN FETs
- GaN FETs in Parallel Using Drain Ferrite Beads and RC Snubbers for High-power Applications
- 2.3kW High-efficiency 2-phase CRM Boost Converter for Solar Inverters
- Multi-pulse Testing for GaN Layout Verification
- Ultrafast Overcurrent Breaker Circuit for Prototyping
Published: 2019-04-15
| Updated: 2024-03-08