Toshiba CUHSx Schottky Barrier Diodes (SBDs) are suitable for rectifying power supply circuits and protecting reverse currents. These diodes are high-speed switching devices that incorporate Si technology and use a US2H package to achieve low-thermal resistance. These SBDs offer a reverse leakage greater than other types of diodes making them more susceptible to thermal runaway under high-temperature and high-voltage conditions. To improve the efficiency of power supply use, these SBDs are required to have low forward voltage and low reverse current. The DC-DC boost converter ICs are used in voltage-boosting circuits for driving LCD backlight LEDs in portable devices like smartphones, tablets, and notebook PCs. In addition to the DC-DC converter circuits, Toshiba CUHSx Schottky Barrier Diodes are also used in applications such as motor driver circuits, MOSFET gate driver circuits, and freewheeling diodes.
High-speed switching action
Low forward voltage, 280mV to 660mV range
30V to 60V repetitive reverse voltage range
Low reverse current, 6µA to 300µA range
1A, 1.5A, and 2A average rectified current ratings
10A forward surge current
-55°C to +150°C operating temperature range
Small size and high-allowable loss
US2H package (package code: SOD-323HE)
Improved thermal characteristics
Portable battery packs
Power supply circuit
Toshiba Discrete Solid State Drive (SSD) Solutions
Broad product lineup that meets the latest requirements with TVS, SBD, LDOs, and Load Switch ICs.