Toshiba CUHS10F60 Schottky Barrier Diode

Toshiba CUHS10F60 Schottky Barrier Diode (SBD) is designed for high-speed switching applications with high breakdown voltage and low reverse current. This SBD provides a maximum reverse voltage of 60V and an average rectified current of 1A. The CUHS10F60 diode features a storage temperature range from -55°C to +150°C and a maximum junction temperature of +150°C. The Toshiba CUHS10F60 SBD also features a reverse leakage current of 0.04mA when the reverse voltage is 60V.

Specifications

Absolute maximum ratings
- 60V reverse voltage (V_R)
- 1A average rectified current
- 10A peak forward surge current
- +150°C junction temperature
- -55°C to +150°C storage temperature
US2H-2 package style

130pF total capacitance
0.36V to 0.56 typical forward voltage range, 0.41V to 0.62V maximum range
Reverse current
- 0.7μA typical at VR = 10V
- 6μA typical at V_R= 60V, 40μA maximum