Toshiba CUHS10F60 Schottky Barrier Diode (SBD) is designed for high-speed switching applications with high breakdown voltage and low reverse current. This SBD provides a maximum reverse voltage of 60V and an average rectified current of 1A. The CUHS10F60 diode features a storage temperature range from -55°C to +150°C and a maximum junction temperature of +150°C. The Toshiba CUHS10F60 SBD also features a reverse leakage current of 0.04mA when the reverse voltage is 60V.
Absolute maximum ratings
60V reverse voltage (VR)
1A average rectified current
10A peak forward surge current
+150°C junction temperature
-55°C to +150°C storage temperature
US2H-2 package style
130pF total capacitance
0.36V to 0.56 typical forward voltage range, 0.41V to 0.62V maximum range
0.7μA typical at VR = 10V
6μA typical at VR = 60V, 40μA maximum
Toshiba Small Signal Schottky Barrier Diodes
Variety of packages, voltages, and current ratings to meet a range of design requirements.