Toshiba CUHS10F60 Schottky Barrier Diode

Toshiba CUHS10F60 Schottky Barrier Diode (SBD) is designed for high-speed switching applications with high breakdown voltage and low reverse current. This SBD provides a maximum reverse voltage of 60V and an average rectified current of 1A. The CUHS10F60 diode features a storage temperature range from -55°C to +150°C and a maximum junction temperature of +150°C. The Toshiba CUHS10F60 SBD also features a reverse leakage current of 0.04mA when the reverse voltage is 60V.


  • Absolute maximum ratings
    • 60V reverse voltage (VR)
    • 1A average rectified current
    • 10A peak forward surge current
    • +150°C junction temperature
    • -55°C to +150°C storage temperature
  • US2H-2 package style
  • 130pF total capacitance
  • 0.36V to 0.56 typical forward voltage range, 0.41V to 0.62V maximum range
  • Reverse current
    • 0.7μA typical at VR = 10V
    • 6μA typical at V= 60V, 40μA maximum



Performance Graph - Toshiba CUHS10F60 Schottky Barrier Diode
Published: 2018-07-04 | Updated: 2023-02-16