SemiQ SiC Schottky Diode Modules (SBD Parallel)

SemiQ SiC Schottky Diode Modules (SBD Parallel) offer enhanced performance with robust SiC chipsets and minimized parasitic package elements. The SiC Schottky Diode Modules are designed for low losses and EMI noise, with low junction to case thermal resistance. The Modules are rugged and easy to mount with independent temperature switching behavior.

SemiQ SiC Schottky Diodes exhibit low on-state resistance at high temperatures with excellent switching performance, simplifying the thermal design of power electronic systems. The Schottky Diode Modules provide outstanding performance during a high-frequency operation with and low EMI noises. With positive TC of VF, paralleling is easy for the diode modules. The SiC Schottky Diode Modules operate with zero switching loss, significantly increasing efficiency and reducing heat dissipation while requiring smaller heatsinks. These features make the Diode Modules ideal for applications in power supplies for DC power equipment, rectifier for induction heating, welding equipment, and high-temperature environments.


  • Fast, temperature-independent switching
  • Zero reverse and forward recovery current from SiC SBDs
  • Positive temperature coefficient on VF
  • Low stray inductance
  • Outstanding performance at high frequency operation
  • Low losses and low EMI noises
  • Very rugged and easy mount
  • Direct mounting to heatsink (isolated package)
  • Low junction to case thermal resistance
  • Easy paralleling due to positive TC of VF
  • RoHS Compliant


  • Supplies for DC power equipment
  • Rectifier for induction heating
  • Switched-mode power supply
  • Welding equipment
  • Charging stations
  • High temperature and rectifiers


  • 600V/650V/1200V/1700V Maximum reverse voltage
  • -55°C to 175°C Operating junction temperature

Typical Application Circuit

Application Circuit Diagram - SemiQ SiC Schottky Diode Modules (SBD Parallel)
Published: 2020-08-25 | Updated: 2022-03-11