ROHM Semiconductor YQx0 Schottky Barrier Diodes

ROHM Semiconductor YQx0 Schottky Barrier Diodes provide low forward voltages, reverse currents, and capacitances with high reliability. The YQx0 Schottky Barrier Diodes feature a Trench MOS structure with a +150°C junction temperature. Applications include switching power supplies, freewheeling diodes, and reverse polarity protection.


  • High reliability
  • Power mold type
  • Low forward voltage and reverse current
  • Low capacitance
  • Trench MOS structure
  • Cathode common dual type available
  • TO-252, TO-263L, and TO-277A package options


  • Switching power supplies
  • Freewheel diodes
  • Reverse polarity protection


  • 100V repetitive peak reverse voltage
  • 100V reverse voltage
  • Reverse currents
    • 70μA, 80μA, or 150μA maximum at +25°C
    • 20mA or 40mA maximum at +125°C
  • 20A average rectified forward current
  • 0.62V to 0.86V maximum forward voltage range
  • 150A or 200A peak forward surge currents
  • +150°C junction temperature

Inner Circuits

ROHM Semiconductor YQx0 Schottky Barrier Diodes
Published: 2023-09-13 | Updated: 2023-09-19