ROHM Semiconductor YQx0 Schottky Barrier Diodes
ROHM Semiconductor YQx0 Schottky Barrier Diodes provide low forward voltages, reverse currents, and capacitances with high reliability. The YQx0 Schottky Barrier Diodes feature a Trench MOS structure with a +150°C junction temperature. Applications include switching power supplies, freewheeling diodes, and reverse polarity protection.
Features
- High reliability
- Power mold type
- Low forward voltage and reverse current
- Low capacitance
- Trench MOS structure
- Cathode common dual type available
- TO-252, TO-263L, and TO-277A package options
Applications
- Switching power supplies
- Freewheel diodes
- Reverse polarity protection
Specifications
- 100V repetitive peak reverse voltage
- 100V reverse voltage
- Reverse currents
- 70μA, 80μA, or 150μA maximum at +25°C
- 20mA or 40mA maximum at +125°C
- 20A average rectified forward current
- 0.62V to 0.86V maximum forward voltage range
- 150A or 200A peak forward surge currents
- +150°C junction temperature
Inner Circuits
Related Diodes
ROHM Semiconductor YQx0 Automotive-Grade Schottky Barrier Diodes
AEC-Q101-qualified devices that provide low forward voltages, reverse currents, and capacitances.
Published: 2023-09-13
| Updated: 2023-09-19