ROHM Semiconductor R6049YN N-Channel Power MOSFETs
ROHM Semiconductor R6049YN N-Channel Power MOSFETs offer high-speed switching and low-on resistances for switching applications. Operating in a -55°C to +150°C temperature range, these single-channel enhancement mode devices feature a 600V drain-source breakdown voltage, a ±22A or ±49A continuous drain current, and a 65nC total gate charge. The ROHM R6049YN N-Channel Power MOSFETs are available in TO-220AB-3, TO-220FM-3, and TO-247G-3 package options.
Features
- Low on-resistance
- Fast switching
- Drive circuits can be simple
- Si technology
- Enhancement channel mode
- Through-hole mount
- Halogen-free mold compound
- Lead-free plating and RoHS-compliant
Specifications
- 600V drain-source breakdown voltage
- ±22A or ±49A continuous drain current
- ±147A pulsed drain current
- 82mΩ on-drain-source resistance
- ±30V gate-source voltage
- 4V to 6V gate-source threshold voltage range
- 100μA maximum zero gate voltage drain current
- ±100nA maximum gate-source leakage current
- 49A maximum source current
- 1.5V maximum source-drain voltage
- 1.0Ω typical gate resistance
- 6.5μC typical reverse recovery charge
- 34A typical peak reverse recovery current
- Typical gate charge
- 65nC total
- 21nC source
- 30nC drain
- 7V typical gate plateau voltage
- 90W or 448W power dissipation
- Typical capacitance
- 2940pF input
- 100pF output
- Effective output
- 100pF energy related
- 650pF time related
- Single pulse avalanche
- 2.8A current
- 208mJ energy
- Typical time
- 38ns turn-on delay
- 33ns rise
- 91ns turn-off delay
- 19ns fall
- 380ns reverse recovery
- -55°C to +150°C operating temperature range
- TO-220AB-3, TO-220FM-3, and TO-247G-3 package options
Inner Circuit
Published: 2023-09-12
| Updated: 2023-09-19