ROHM Semiconductor R6049YN N-Channel Power MOSFETs

ROHM Semiconductor R6049YN N-Channel Power MOSFETs offer high-speed switching and low-on resistances for switching applications. Operating in a -55°C to +150°C temperature range, these single-channel enhancement mode devices feature a 600V drain-source breakdown voltage, a ±22A or ±49A continuous drain current, and a 65nC total gate charge. The ROHM R6049YN N-Channel Power MOSFETs are available in TO-220AB-3, TO-220FM-3, and TO-247G-3 package options.


  • Low on-resistance
  • Fast switching
  • Drive circuits can be simple
  • Si technology
  • Enhancement channel mode
  • Through-hole mount
  • Halogen-free mold compound
  • Lead-free plating and RoHS-compliant


  • 600V drain-source breakdown voltage
  • ±22A or ±49A continuous drain current
  • ±147A pulsed drain current
  • 82mΩ on-drain-source resistance
  • ±30V gate-source voltage
  • 4V to 6V gate-source threshold voltage range
  • 100μA maximum zero gate voltage drain current
  • ±100nA maximum gate-source leakage current
  • 49A maximum source current
  • 1.5V maximum source-drain voltage
  • 1.0Ω typical gate resistance
  • 6.5μC typical reverse recovery charge
  • 34A typical peak reverse recovery current
  • Typical gate charge
    • 65nC total
    • 21nC source
    • 30nC drain
  • 7V typical gate plateau voltage
  • 90W or 448W power dissipation
  • Typical capacitance
    • 2940pF input
    • 100pF output
    • Effective output
      • 100pF energy related
      • 650pF time related
  • Single pulse avalanche
    • 2.8A current
    • 208mJ energy
  • Typical time
    • 38ns turn-on delay
    • 33ns rise
    • 91ns turn-off delay
    • 19ns fall
    • 380ns reverse recovery
  • -55°C to +150°C operating temperature range
  • TO-220AB-3, TO-220FM-3, and TO-247G-3 package options

Inner Circuit

ROHM Semiconductor R6049YN N-Channel Power MOSFETs
Published: 2023-09-12 | Updated: 2023-09-19