ROHM Semiconductor 4th Generation N-Channel SiC Power MOSFETs

ROHM Semiconductor 4th Generation N-Channel Silicon-Carbide (SiC) Power MOSFETs provide low on-resistances with improvements in the short-circuit withstand time. The 4th Generation SiC MOSFETs are easy to parallel and simple to drive. The MOSFETs feature fast switching speeds/reverse recovery, low switching losses, and a +175°C maximum operating temperature. The ROHM 4th Generation N-Channel SSiC Power MOSFETs support a 15V gate-source voltage that contributes to device power savings.


  • Low on-resistance with improving short-circuit ruggedness
  • Minimizes switching loss by drastically reducing parasitic capacitance
  • Supports 15V Gate-Source voltage, improving application design freedom
  • Fast switching speed
  • Fast reverse recovery
  • Easy to parallel
  • Simple to drive
  • Silicon Carbide (SiC) technology
  • N-Channel transistor polarity
  • Single-channel
  • Through-hole mounting
  • Enhancement mode
  • +175°C maximum operating temperature
  • AEC-Q101-qualified options available
  • Lead-free, RoHS and REACH compliant


  • Automobile
  • Switch mode power supplies
  • Solar inverters
  • DC/DC converters
  • Induction heating
  • Motor drives


  • 3 to 7 pins
  • -4V to +21V gate-source voltage range, 4.8V threshold
  • 63nC to 170nC gate-charge range
  • 26A to 105A continuous drain current range
  • 13mΩ to 62mΩ on-drain source resistance
  • 750V or 1.2kV Drain-source breakdown voltage
  • 11ns to 57ns rise time
  • 9.6ns to 21ns fall time
  • Typical delay time
    • 4.4ns to 20ns turn-on range
    • 22ns to 83ns turn-off range
  • 93W to 312W power dissipation range
  • Available packages
    • TO-247-4L
    • TO-247N-3
    • TO-263-7L



Performance Graph - ROHM Semiconductor 4th Generation N-Channel SiC Power MOSFETs
Published: 2023-03-15 | Updated: 2023-08-28