ROHM Semiconductor 4th Generation N-Channel SiC Power MOSFETs
ROHM Semiconductor 4th Generation N-Channel Silicon-Carbide (SiC) Power MOSFETs provide low on-resistances with improvements in the short-circuit withstand time. The 4th Generation SiC MOSFETs are easy to parallel and simple to drive. The MOSFETs feature fast switching speeds/reverse recovery, low switching losses, and a +175°C maximum operating temperature. The ROHM 4th Generation N-Channel SSiC Power MOSFETs support a 15V gate-source voltage that contributes to device power savings.
Features
- Low on-resistance with improving short-circuit ruggedness
- Minimizes switching loss by drastically reducing parasitic capacitance
- Supports 15V Gate-Source voltage, improving application design freedom
- Fast switching speed
- Fast reverse recovery
- Easy to parallel
- Simple to drive
- Silicon Carbide (SiC) technology
- N-Channel transistor polarity
- Single-channel
- Through-hole mounting
- Enhancement mode
- +175°C maximum operating temperature
- AEC-Q101-qualified options available
- Lead-free, RoHS and REACH compliant
Applications
- Automobile
- Switch mode power supplies
- Solar inverters
- DC/DC converters
- Induction heating
- Motor drives
Specifications
- 3 to 7 pins
- -4V to +21V gate-source voltage range, 4.8V threshold
- 63nC to 170nC gate-charge range
- 26A to 105A continuous drain current range
- 13mΩ to 62mΩ on-drain source resistance
- 750V or 1.2kV Drain-source breakdown voltage
- 11ns to 57ns rise time
- 9.6ns to 21ns fall time
- Typical delay time
- 4.4ns to 20ns turn-on range
- 22ns to 83ns turn-off range
- 93W to 312W power dissipation range
- Available packages
- TO-247-4L
- TO-247N-3
- TO-263-7L
Videos
Performance
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