UnitedSiC / Qorvo High-Performance SiC FETs

UnitedSiC / Qorvo High-Performance SiC FETs deliver best-in-class switching speed, lower switching losses, higher efficiency, and excellent cost-effectiveness. The components are offered in standard thru-hole (including Kelvin) and surface mount packages. The family comprises the UF4C/SC, UJ4C/SC, UJ3C, and UF3C/SC series and is based on a unique cascode configuration, where a high-performance SiC JFET is co-packaged with a cascode-optimized Si-MOSFET to produce a standard gate drive SiC device.

The UF4C/SC is a high-performance series rated at 1200V and delivers a low RDS(on) x area. The UJ4C/UJ4SC series is rated at 750V and offer high performance for power switch figures of merit with benchmarks in RDS(on) x Area, RDS(on) x Coss,tr, and RDS(on) x Eoss. The UJ3C series is rated at 650V and 1200V, built for "ease of use" and is the perfect solution when upgrading from an existing silicon-based device. The UF3C/UF3SC series is rated at 650V, 1200V, and 1700V and provides fast switching speed, high efficiency, and low switching losses for hard-switching applications. These devices come in TO-247-3L, TO-247-4L, TO-220-3L, D²PAK-3L, and D²PAK-7L packages.


  • 6mΩ to 150mΩ on-resistance range (RDS(on) at +25°C)
  • +175°C maximum operating temperature
  • Excellent reverse recovery
  • Low gate charge
  • Low intrinsic capacitance
  • AEC-Q101 qualified options
  • ESD protected (HBM class 2)


  • Traction inverters
  • DC-DC converters
  • Onboard charging 
  • PV inverters
  • EV battery charging
  • Switched-mode power supplies
  • Power factor correction modules
  • Motor drives 
  • Induction heating
  • IT infrastructure

SiC FET Product Family

Infographic - UnitedSiC / Qorvo High-Performance SiC FETs

SiC FET Technology Comparisons

UnitedSiC / Qorvo High-Performance SiC FETs


Published: 2018-07-17 | Updated: 2023-05-09