Lite-On LTE-L201E-01 Pulsed Laser Diode

Lite-On LTE-L201E-01 Pulsed Laser Diode is a nano-stacked device in a TO-56 package with a 905nm laser wavelength. Operating in a -40°C to +85°C temperature range, the LTE-L201E-01 features a 200µm x 10µm laser aperture, a 15V maximum operating voltage (13V typical), and a 40A maximum operating current. The device is suited for short laser pulses from 1ns to 100ns. Applications include electronic equipment, equipment illumination, laser range finder/speed measurement, long-range 3D sensing, IR night illumination, motion detection, and CCTV surveillance.

Features

  • Peak power
    • 75W at 30A operating current
    • 95W at 40A operating current
  • 905nm laser wavelength
  • Suited for short laser pulses from 1ns to 100ns
  • 200µm x 10µm laser aperture
  • TO56 package

Applications

  • Electronic equipment
  • Equipment illumination
  • Laser range finder and speed measurement
  • Long-range 3D sensing
  • IR night illumination, motion detection, and CCTV surveillance

Specifications

  • 110W maximum peak output power
  • 40A maximum operating current
  • 0.1% duty cycle
  • 5V maximum reverse voltage
  • 0.5A typical threshold current
  • 15V maximum operating voltage, 13V typical
  • 895nm to 915nm peak wavelength range
  • 0.25nm/K typical peak wavelength temperature coefficient
  • 38K/W typical junction-to-solder point thermal resistance
  • Beam divergence
    • 10° parallel to pn-Junction
    • 25° perpendicular to pn-Junction
  • -40°C to +85°C operating temperature range
  • +260°C maximum soldering temperature for 10s
Published: 2023-08-22 | Updated: 2023-08-25