onsemi Wide Bandgap EliteSiC (Silicon Carbide) Devices

onsemi Wide Bandgap EliteSiC (Silicon Carbide) Devices incorporate a technology that provides superior switching performance and higher reliability compared to silicon. The system benefits include the highest efficiency, faster-operating frequency, increased power density, reduced EMI, and reduced system size and cost. The EliteSiC portfolio includes 650V, 1200V, and 1700V diodes, 650V and 1200V IGBT and SiC diode Power Integrated Modules (PIMs), 1200V MOSFETs and SiC MOSFET drivers, and AEC-Q100 qualified devices.


  • Faster switching
  • Low power losses
  • Low ON resistance
  • Increased power density
  • Higher operating temperatures
  • Faster operating frequency
  • Higher efficiency
  • No reverse recovery current
  • Reduced EMI
  • Reduced system size and cost
  • Increased reliability
  • Compact solutions
  • Lower weight
  • Excellent thermal performance
  • Temperature independent switching characteristics
  • Compact chip size ensure low capacitance and gate charge
  • Provides a unique ecosystem focused around WBG solutions:
    • SiC diodes geared towards ruggedness
    • SiC MOSFETs geared towards ruggedness and speed
    • SiC drivers designed for WBG devices
    • SPICE based physical models for MOSFETs and diode


  • Solar boost converters and inverters
  • Power factor correction
  • Electric vehicle charging
  • Uninterruptible Power Supplies (UPS)
  • Server and telecom power supplies



onsemi Wide Bandgap EliteSiC (Silicon Carbide) Devices
Published: 2019-05-22 | Updated: 2023-01-16