onsemi 1200V EliteSiC (Silicon Carbide) N-Channel MOSFETs
onsemi 1200V EliteSiC (Silicon Carbide) N-Channel MOSFETs are 1200V, 80mΩ MOSFETs that provide superior switching performance and high reliability. These MOSFETs offer low ON resistance and come in compact chip sizes, ensuring low capacitance and gate charge. The EliteSiC N-Channel MOSFETs feature high efficiency, fast operation frequency, high-speed switching, increased power density, reduced EMI, and reduced system size. These MOSFETs come in TO247-3L/TO247-3LD packages. The NVHL080N120SC1 and NVHL080N120SC1A MOSFETs are qualified for automotive grade according to AEC-Q101 certification.
Features
- 1200V VDSS at TJ=150°C
- 80mΩ drain-to-source ON-resistance (RDS(on)) (typical)
- High speed switching with low capacitance
- 100% UIL tested
- Operating junction temperature range:
- -55°C to 150°C (for NTHL080N120SC1)
- -55°C to 175°C (for NVHL080N120SC1 and NVHL080N120SC1A)
- Pb-free and RoHS compliant
Applications
- NVHL080N120SC1:
- Automotive auxiliary motor drive
- Automotive onboard charger
- Automotive DC/DC converter for Electric Vehicle (EV)/Hybrid Electric Vehicle (HEV)
- NTHL080N120SC1:
- Industrial motor drive
- UPS
- Boost inverter
- Photo-Voltaic (PV) charger
- NVHL080N120SC1A:
- Automotive onboard charger
- Automotive DC/DC converter for Electric Vehicle (EV)/Hybrid EV (HEV)
Videos
NxHL080N120SC1 Performance Graph
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