onsemi NVBG070N120M3S Silicon Carbide (SiC) MOSFET
onsemi NVBG070N120M3S Silicon Carbide (SiC) MOSFET is a 1200V M3S planar EliteSiC MOSFET designed for fast switching applications. This MOSFET offers optimum performance when driven with an 18V gate drive but also works well with a 15V gate drive. The NVBG070N120M3S SiC MOSFET features a 57nC ultra-low gate charge, 57pF high-speed switching with low capacitance, and 65mΩ typical drain-to-source ON resistance at VGS=18V. This MOSFET is 100% Avalanche tested, AEC-Q101 qualified, and PPAP capable. The NVBG070N120M3S SiC MOSFET is available in a D2PAK-7L package and is Lead-free 2LI (on second-level interconnection) and RoHS compliant (with exemption 7a). Typical applications include automotive on-board chargers and DC/DC converters for EV/HEV.
Features
- D2PAK-7L package
- 15V to 18V gate drive range
- M3S technology (64.3mΩ RDS(ON) with low EON and EOFF losses)
- 100% Avalanche tested
- AEC-Q101 automotive qualified
- Lead-free 2LI (on second-level interconnection)
- Halide-free and RoHS compliant with exemption 7a
Specifications
- 57nC ultra-low gate charge
- 57pF high-speed switching with low capacitance
- 65mΩ typical drain-to-source ON resistance at VGS=18V
- 100µA maximum zero gate voltage drain current
- 12s typical forward transconductance
- 1230pF typical input capacitance
- 57pF typical output capacitance
- 33A source current (body diode)
- 91mJ single pulse drain-to-source Avalanche energy
- 270°C maximum temperature for soldering (10s)
- -55°C to 175°C operating junction temperature range
- -55°C to 175°C storage temperature range
Applications
- Automotive on-board chargers
- Automotive DC/DC converters for EV/HEV
Package Dimensions
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