Microchip Technology Silicon Carbide (SiC) MOSFETs
Microchip Technology Silicon Carbide (SiC) MOSFETs offer superior dynamic and thermal performance over conventional Silicon (Si) power MOSFETs. These MOSFETs have low capacitances, low gate charge, fast switching speed, and good avalanche ruggedness. The SiC MOSFETs can stabilize operation at 175°C high junction temperature. These MOSFETs provide high efficiency with low switching losses. The SiC MOSFETs do not require any freewheeling diodes. Typical applications include smart grid transmission and distribution, induction heating and welding, and power supply and distribution.
Features
- Low capacitance and low gate charge
- Good dynamic and thermal performance
- Fast switching speed
- Stable operation at 175°C junction temperature
- A fast and reliable body diode
- Good Avalanche ruggedness
- High efficiency with low switching losses
- Simple to drive
- Eliminate the need for an external freewheeling diode
- Low system cost
- AEC-Q101 qualification
Applications
- Actuation systems
- Automotive
- Commercial aviation
- Integrated vehicle systems
- Medical imaging
- Motor control
- Photovoltaic solutions
- Powertrain and EV charging
- Safety heritage
- Unmanned Aerial Vehicle (UAV)
Related Products
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Microchip Technology Silicon Carbide (SiC) Schottky Barrier Diodes
Zero forward and reverse recovery charge for improved system efficiency.
Published: 2019-06-03
| Updated: 2023-05-26