Infineon Technologies TRENCHSTOP™ IGBT7 S7
Infineon Technologies TRENCHSTOP™ IGBT7 S7 offers an extensive 1200V portfolio for all industrial applications requiring short circuit capability/ruggedness. The IGBT7 S7 is an efficient short-circuit rugged discrete IGBT providing at least 10% lower saturation voltage than others.
The Infineon TRENCHSTOP IGBT7 S7 is available with very soft full-rated EC7 (emitter-controlled) diodes, allowing a significantly reduced IGBT saturation VCEsat and low Qrr. The IGBT7 delivers superior controllability and short-circuit ruggedness. Additionally, the device features excellent electrical performance, higher controllability, an easy EMI design, and higher reliability in harsh application conditions.
Features
- Short-Circuit Withstand Time (SCWT) of 8µs
- High power density
- Full current, soft, and low Qrr diode
- High system reliability
- Superior controllability
- Improved high-voltage humidity ruggedness (HV-H3TRB test passed)
- Faster, full-rated co-packed EC7 diode, more efficient and softer than Rapid 1 diode
Applications
- Motor drives
- UPS/PV
- Air conditioner PFC
Specifications
- Higher breakdown voltage of 1200V
- Low IGBT saturation (VCEsat) and low diode forward (VF) voltage
Features & Benefits
IGBT7 Comparasion Chart
Superior Option for All Industrial Applications
Associated Products
Infineon Technologies TRENCHSTOP™ IGBT7 Discretes & Modules
Delivers power density due to lower static losses and softer switching.
Infineon Technologies 1200V Common Emitter IGBT Modules
Combines a 600A or 800A common emitter & a fast trench IGBT module with an emitter-controlled diode.