Infineon Technologies 6ED Full-Bridge Driver ICs

Infineon Technologies 6ED Full-Bridge Driver ICs control power devices like MOS-transistors or IGBTs in 3-phase systems. Based on the used SOI-technology, there is an excellent ruggedness on transient voltages. No parasitic thyristor structures are present in the devices. Hence, no parasitic latch-up may occur at all temperatures and voltage conditions.

The six independent drivers are controlled at the low-side using CMOS resp. LSTTL compatible signals, down to 3.3V logic. The 6ED includes an under-voltage detection unit with hysteresis characteristic and an overcurrent detection. The over-current level is adjusted by choosing the resistor value and the threshold level at pin ITRIP. Both error conditions (under-voltage and over-current) lead to a definite shut down of all six switches. An error signal is provided at the FAULT open drain output pin.

The blocking time after over-current can be adjusted with an RC-network at pin RCIN. The input RCIN owns an internal current source of 2.8µA. Therefore, the resistor RRCIN is optional. The typical output current can be given with 165mA for pull-up and 375mA for pull down. Because of system safety reasons, a 310ns interlocking time has been realized.

The function of input EN Chip product can optionally be extended with an over-temperature detection, using an external NTC-resistor. The monolithically integrated bootstrap diode structures between pins V_CC and V_Bx can be used for power supply of the high side.