Broadcom ACPL-x34x SiC/GaN MOSFETs and IGBT Optocouplers

Broadcom ACPL-x34x SiC/GaN MOSFETs and IGBT Gate Drive Optocouplers contain an AlGaAs LED, which is optically coupled to an integrated circuit with a power output stage. These optocouplers are ideally suited for driving Silicon Carbide/Gallium Nitride (SiC/GaN) MOSFETs and IGBTs used in power conversion applications. The high operating voltage range of the output stage provides the drive voltages required by gate-controlled devices. The voltage and high peak output current supplied by this optocoupler make it ideally suited for direct driving SiC/GaN MOSFET and IGBT.

Features

  • 1.0A and 2.5A maximum peak output current
  • 15V to 30V wide operating VCC range
  • 110ns maximum propagation delay
  • 50ns maximum propagation delay difference
  • Rail-to-rail output voltage
  • 50kV/μs minimum Common Mode Rejection (CMR) at VCM = 1500V
  • LED current input with hysteresis
  • ICC = 4.2mA maximum supply current
  • Under Voltage Lock-Out Protection (UVLO) with hysteresis
  • -40°C to 105°C industrial temperature range 
  • Safety approval
  • UL Recognized 3750/5000 VRMS for 1min
  • CSA
  • IEC/EN/DIN EN 60747-5-5 VIORM = 891/1140 VPEAK

Applications

  • SiC/GaN MOSFET and IGBT gate drive
  • Motor drives
  • Industrial inverters
  • Renewable energy inverters
  • Switching power supplies
Published: 2015-03-24 | Updated: 2022-03-11