Ultra-low gate charge and exceptional reverse recovery characteristics in a D2PAK-7L package.
1200V SiC FETs with RDS(on) from 23mΩ to 70mΩ and industry-leading Figures of Merit.
Exhibits ultra-low on-resistance and gate charge that allows for low conduction and switching loss.
750V VDS Silicon Carbide FETs available in 5mΩ to 60mΩ options, with ultra-low RDS(on) x EOSS.
SiC FET with RDS(on) of 7mΩ to 45mΩ built for fast switching speeds and lower switching losses.
Ideal drop-in replacement for Silicon IGBTs, FETs, MOSFETs, or super-junction devices.
Based on a unique 'cascode' circuit configuration and feature excellent reverse recovery.