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Bench Talk for Design Engineers

Bench Talk

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Bench Talk for Design Engineers | The Official Blog of Mouser Electronics


Why SiC Devices Are Ideal for Level 3 EV Charging Applications Robert Huntley
Charging an EV can be a lengthy process, however, Level 3 “fast” DC charging techniques promise much faster charging capabilities that reduce charging times to minutes instead of hours. This efficiency relies on high-speed power conversion, for which new wide-bandgap technologies are well suited.

Move Over LEDs, Electric Motors Will Save the Planet Steven Keeping
LEDs save energy, but efficient electric motors can save much more. Now a new generation of GaN transistors promises new power-supply breakthroughs to help the units become even greener.

SiC Devices Usurp Si MOSFETs and Diodes in Servers, Motors, EVs Bill Schweber
Switching devices—both transistors and diodes—based on silicon-on-carbide (SiC) are redefining capabilities of power-related circuits. These offer far better efficiency and range than today’s best silicon-only MOSFETs, IGBTs, and diodes, and are already in widespread use in top-tier data centers and server farms.

Engineering for Space: Many Challenges, Various Solutions Sylvie Barak
High-performance, zero margin for error, extreme environments, and more are just some of the high-stakes challenges that space engineers face. New materials, louvres, space hardening, Whipple shielding, and artificial intelligence (AI) are just some of the ways space design challenges are addressed.

GaN the Giant Killer? Barry Manz
Gallium nitride (GaN) has evolved from a promising laboratory curiosity to a major force in RF power generation in less than a decade. Much has been made of its inherent advantages, leading to projections that it will displace gallium arsenide and silicon LDMOS. However, for a variety of reasons GaN is more likely to complement its more entrenched rivals than displace them.

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