NTH4L014N120M3P

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863-NTH4L014N120M3P

NTH4L014N120M3P

Mfr.:

Description:
MOSFET SIC MOS TO247-4L 14MOHM 1200V

Lifecycle:
New Product: New from this manufacturer.
ECAD Model:
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Availability

Stock:

0
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On Order:

450

Factory Lead-Time:

60
Weeks Estimated factory production time for quantities greater than shown.
Long lead time reported on this product.
 
Minimum: 1   Multiples: 1

$-.--
$-.--

Pricing (USD)

Qty. Unit Price
Ext. Price
1 $50.02 $50.02
10 $46.68 $466.80
30 $44.72 $1,341.60
Product Attribute Attribute Value
onsemi
Product Category: MOSFET
RoHS:  Details
SiC
Through Hole
TO-247-4L
N-Channel
1 Channel
1.2 kV
127 A
20 mOhms
- 10 V, + 22 V
4.63 V
329 nC
- 55 C
+ 175 C
686 W
Enhancement
NTH4L014N120M3P
Tube
Brand: onsemi
Configuration: Single
Fall Time: 13 ns
Forward Transconductance - Min: 29 S
Product Type: MOSFET
Rise Time: 40 ns
Factory Pack Quantity: 30
Subcategory: MOSFETs
Typical Turn-Off Delay Time: 68 ns
Typical Turn-On Delay Time: 26 ns
USHTS:
8541290095
TARIC:
8541290000
ECCN:
EAR99

NTH4L014N120M3P Silicon Carbide (SiC) MOSFET

onsemi NTH4L014N120M3P Silicon Carbide (SiC) MOSFET is optimized for power applications. The onsemi MOSFET features planar technology that works reliably with negative gate voltage drives and turns off spikes on the gate. This family has optimum performance when driven with an 18V gate drive but also works well with a 15V gate drive.  

 

Image Description
No Image
Isolated Gate Drivers HIGH PERFORMANCE ISOLATED DUAL CHANNEL GATE DRIVER
No Image
Isolated Gate Drivers HIGH PERFORMANCE ISOLATED DUAL CHANNEL GATE DRIVER