FFSH50120A

onsemi
863-FFSH50120A

FFSH50120A

Mfr.:

Description:
Schottky Diodes & Rectifiers 1200V 10A SIC SBD

Datasheet:

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Learn more about onsemi FFSH50120A

In Stock: 847

Stock:

847 Can Ship Immediately

Factory Lead-Time:

46 Weeks Estimated factory production time for quantities greater than shown.
 
Minimum: 1   Multiples: 1

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Pricing (USD)

Qty. Unit Price
Ext. Price
$22.67 $22.67
$20.15 $201.50
$19.80 $1,188.00
$17.61 $2,113.20
$15.03 $7,665.30
Product Attribute Attribute Value
onsemi
Product Category: Schottky Diodes & Rectifiers
RoHS:  Details
Schottky Silicon Carbide Diodes
Through Hole
TO-247-2
Single
SiC
50 A
1.2 kV
1.45 V
280 A
200 uA
- 55 C
+ 175 C
Tube
Brand: onsemi
Pd - Power Dissipation: 736 W
Product Type: Schottky Diodes & Rectifiers
Factory Pack Quantity: 30
Subcategory: Diodes & Rectifiers
Vr - Reverse Voltage: 1.2 kV
Unit Weight: 0.187694 oz
USHTS:
8541100080
CNHTS:
8541100000
CAHTS:
8541100090
JPHTS:
854110090
TARIC:
8541100000
MXHTS:
8541100101
ECCN:
EAR99

1200V EliteSiC (Silicon Carbide) Schottky Diodes

onsemi 1200V EliteSiC (Silicon Carbide) Schottky Diodes provide superior switching performance and higher reliability to silicon-based devices. These SiC Schottky diodes feature no reverse recovery current, temperature-independent switching, and excellent thermal performance. The system benefits include high efficiency, fast operating frequency, high power density, low EMI, and reduced system size and cost.

FFSH SiC Schottky Diodes

onsemi FFSH Silicon Carbide (SiC) Schottky Diodes provide improved system efficiency and have a max junction temperature of +175°C. These onsemi Schottky Diodes have no switching loss and a high surge current capacity. FFSH diodes use Silicon Carbide semiconductor material for higher operating frequency, increasing power density and reduction of system size/cost. This ensures high reliability and robust operation during surge or over-voltage conditions.

Wide Bandgap EliteSiC (Silicon Carbide) Devices

onsemi Wide Bandgap EliteSiC (Silicon Carbide) Devices incorporate a technology that provides superior switching performance and higher reliability compared to silicon. The system benefits include the highest efficiency, faster-operating frequency, increased power density, reduced EMI, and reduced system size and cost. The EliteSiC portfolio includes 650V, 1200V, and 1700V diodes, 650V and 1200V IGBT and SiC diode Power Integrated Modules (PIMs), 1200V MOSFETs and SiC MOSFET drivers, and AEC-Q100 qualified devices.

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