VSMY2853G

Vishay Semiconductors
78-VSMY2853G

VSMY2853G

Mfr.:

Description:
Infrared Emitters - High Power SurflightVCSEL 850nm 35mW/sr, +/-28deg.

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In Stock: 6,385

Stock:

6,385
Can Ship Immediately

On Order:

330

Factory Lead-Time:

5
Weeks Estimated factory production time for quantities greater than shown.
 
Minimum: 1   Multiples: 1

$-.--
$-.--
Full Reel (Order in multiples of 6000)
Cut Tape
MouseReel™ (+$7.00)

Pricing (USD)

Qty. Unit Price
Ext. Price
Cut Tape / MouseReel™
$0.78 $0.78
$0.537 $5.37
$0.379 $37.90
$0.369 $184.50
$0.312 $312.00
$0.297 $742.50
Full Reel (Order in multiples of 6000)
$0.295 $1,770.00
$0.288 $6,912.00
48,000 Quote
† $7.00 MouseReel™ fee will be added and calculated in your shopping cart. All MouseReel™ orders are non-cancellable and non-returnable.
Product Attribute Attribute Value
Vishay
Product Category: Infrared Emitters - High Power
RoHS:  Details
SMD/SMT
850 nm
35 mW/sr
28 deg
100 mA
1.65 V
55 mW
- 40 C
+ 85 C
Reel
Cut Tape
MouseReel
Brand: Vishay Semiconductors
Fall Time: 10 ns
Height: 2.55 mm
Illumination Color: Infrared
Length: 2.3 mm
Lens Dimensions: 1.8 mm
Lens Shape: Dome
Moisture Sensitive: Yes
Product: High Power Infrared Emitters
Product Type: IR Emitters (IR LEDs)
Rise Time: 10 ns
Series: VSMY2853
Factory Pack Quantity: 6000
Subcategory: Infrared Data Communications
Tradename: SurfLight
Type: High Speed Infrared Emitting Diode
Viewing Angle: 28 deg
Vr - Reverse Voltage: 5 V
Width: 2.3 mm
Unit Weight: 0.004250 oz

USHTS:
8541410000
CNHTS:
8541410000
CAHTS:
8541400010
JPHTS:
8541400103
TARIC:
8541409090
MXHTS:
8541410100
BRHTS:
85414011
ECCN:
EAR99

SurfLight™ IR Emitters

Vishay Semiconductors SurfLight™ Infrared (IR) Emitters feature 850nm or 940nm peak wavelength, GaAlAs surface emitter chip technology, high radiant power, high optical power, and high speed. SurfLight IR emitters have gullwing or reverse gullwing terminal configurations and are suitable for high pulse current operation. The 940nm IR emitters have a narrower half-degree angle of intensity and better response times for applications. These Vishay compared to the previous generation of IR emitters.

IR Emitters & Silicon PIN Photodiode

Vishay Semiconductors IR Emitters & Silicon PIN Photodiodes are high-speed 830nm to 950nm infrared emitters and package-matched high-speed silicon PIN photodiodes with high radiant sensitivity from 1mW/sr to 1800 mW/sr. Rise and fall times range from 2.5ns to 1000ns. Vishay offers double heterojunction infrared emitters with the lowest forward voltages on the market and highly efficient homojunction emitters. Vishay also offers the broadest selection of high-speed, low dark current PIN photodiodes that are specifically designed to achieve excellent sensitivity together with high reliability.

High-Power, High-Speed Infrared Emitters

Vishay VSMB294x/VSMY2853 High-Speed, High-Power Infrared Emitters consist of an adapted lens radius to provide wide ±25° and ±28° angles of half intensity. The resulting typical radiant intensity ranges from 20mW/sr to 35mW/sr at a 100mA drive current. Saving space over lensed PLCC2 solutions, the IR emitters are available in compact top-view 2.3mm x 2.3mm x 2.5mm gullwing and reverse gullwing packages, and 2.3mm x 2.55mm x 2.3mm side-view packages. These offer fast switching speeds and low forward voltages, as the Vishay devices feature GaAIAs surface emitter chip (VSMY2853), double hetero (VSMF2893), and multi-quantum well (VSMB2943, VSMB2948) technologies.

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