VSLY5940

Vishay Semiconductors
78-VSLY5940

VSLY5940

Mfr.:

Description:
Infrared Emitters - High Power 940nm,T-1.75 600mW/sr,+/-3deg.

ECAD Model:
Download the free Library Loader to convert this file for your ECAD Tool. Learn more about ECAD Model.

In Stock: 6,663

Stock:

6,663 Can Ship Immediately

Factory Lead-Time:

5 Weeks Estimated factory production time for quantities greater than shown.
 
Minimum: 1   Multiples: 1

$-.--
$-.--

Pricing (USD)

Qty. Unit Price
Ext. Price
$1.16 $1.16
$0.797 $7.97
$0.633 $63.30
$0.59 $295.00
$0.517 $517.00
$0.487 $974.00
$0.479 $1,916.00
$0.473 $11,352.00
Product Attribute Attribute Value
Vishay
Product Category: Infrared Emitters - High Power
RoHS:  Details
Through Hole
940 nm
600 mW/sr
3 deg
100 mA
1.65 V
55 mW
- 40 C
+ 85 C
Bulk
Brand: Vishay Semiconductors
Fall Time: 10 ns
Illumination Color: Infrared
Lens Shape: Dome
Product Type: IR Emitters (IR LEDs)
Rise Time: 10 ns
Series: VSLY
Factory Pack Quantity: 4000
Subcategory: Infrared Data Communications
Tradename: SurfLight
Vr - Reverse Voltage: 5 V
Unit Weight: 0.017417 oz
USHTS:
8541410000
CNHTS:
8541410000
CAHTS:
8541400010
JPHTS:
8541400103
TARIC:
8541409090
MXHTS:
8541410100
BRHTS:
85414011
ECCN:
EAR99

SurfLight™ IR Emitters

Vishay Semiconductors SurfLight™ Infrared (IR) Emitters feature 850nm or 940nm peak wavelength, GaAlAs surface emitter chip technology, high radiant power, high optical power, and high speed. SurfLight IR emitters have gullwing or reverse gullwing terminal configurations and are suitable for high pulse current operation. The 940nm IR emitters have a narrower half-degree angle of intensity and better response times for applications. These Vishay compared to the previous generation of IR emitters.

IR Emitters & Silicon PIN Photodiode

Vishay Semiconductors IR Emitters & Silicon PIN Photodiodes are high-speed 830nm to 950nm infrared emitters and package-matched high-speed silicon PIN photodiodes with high radiant sensitivity from 1mW/sr to 1800 mW/sr. Rise and fall times range from 2.5ns to 1000ns. Vishay offers double heterojunction infrared emitters with the lowest forward voltages on the market and highly efficient homojunction emitters. Vishay also offers the broadest selection of high-speed, low dark current PIN photodiodes that are specifically designed to achieve excellent sensitivity together with high reliability.

High-Power, High-Speed Infrared Emitters

Vishay VSMB294x/VSMY2853 High-Speed, High-Power Infrared Emitters consist of an adapted lens radius to provide wide ±25° and ±28° angles of half intensity. The resulting typical radiant intensity ranges from 20mW/sr to 35mW/sr at a 100mA drive current. Saving space over lensed PLCC2 solutions, the IR emitters are available in compact top-view 2.3mm x 2.3mm x 2.5mm gullwing and reverse gullwing packages, and 2.3mm x 2.55mm x 2.3mm side-view packages. These offer fast switching speeds and low forward voltages, as the Vishay devices feature GaAIAs surface emitter chip (VSMY2853), double hetero (VSMF2893), and multi-quantum well (VSMB2943, VSMB2948) technologies.

Image Description
ams OSRAM SFH 213 FA
Photodiodes PHOTODIODE
Vishay TSSP4038
Infrared Receivers 2.5-5.5V 38kHz
ams OSRAM SFH 4546
Infrared Emitters - High Power Infrared 940nm
Vishay TSAL6100
Infrared Emitters - High Power 940nm, T-1.75 170mW/sr, +/-10deg.
ams OSRAM SFH 4544
Infrared Emitters - High Power Infrared 940nm
Vishay TSAL6200
Infrared Emitters - High Power 940nm,T-1.75 72mW/sr,+/-17deg.
Vishay VSLY3943
Infrared Emitters - High Power 940nm, T-1 70mW/sr, +/-17deg.
Vishay VSLY5850
Infrared Emitters - High Power 850nm,T-1.75 600mW/sr,+/-3deg.
Silicon Laboratories SLTB009A
Development Boards & Kits - ARM EFM32GG12 Thunderboard Kit
Nexperia NX7002AKAR
MOSFET NX7002AKA/SOT23/TO-236AB