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VSLY5850

Name: Vishay VSLY5850
Brand: Vishay Semiconductors
SKU: 782-VSLY5850
Price: 1.35 USD
Availability: InStock

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Mouser #:

782-VSLY5850

Mfr. #:

VSLY5850

Description:

Infrared Emitters - High Power 850nm,T-1.75 600mW/sr,+/-3deg.

Datasheet:

VSLY5850 Datasheet

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In Stock: 2,866

Stock:: 2,866 Can Ship Immediately

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Factory Lead-Time:: 5 Weeks Estimated factory production time for quantities greater than shown.

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Pricing (USD)

Qty.	Unit Price	Ext. Price
	$1.35	$1.35
	$0.88	$8.80
	$0.674	$67.40
	$0.612	$306.00
	$0.531	$531.00
	$0.504	$1,008.00
	$0.481	$1,924.00
	$0.48	$5,760.00

Specifications

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Vishay
Product Category:	Infrared Emitters - High Power
RoHS:	Details
Mounting Style:	Through Hole
Wavelength:	850 nm
Radiant Intensity:	600 mW/sr
Beam Angle:	3 deg
If - Forward Current:	100 mA
Vf - Forward Voltage:	1.65 V
Power Rating:	190 mW
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 85 C
Packaging:	Bulk
Brand:	Vishay Semiconductors
Fall Time:	10 ns
Illumination Color:	Infrared
Lens Shape:	Dome
Product Type:	IR Emitters (IR LEDs)
Rise Time:	10 ns
Factory Pack Quantity:	4000
Subcategory:	Infrared Data Communications
Tradename:	SurfLight
Unit Weight:	0.015861 oz

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Documents (5)

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Datasheet

VSLY5850 Datasheet

Application Notes

Processing Instructions for Mounting of Through-Hole LEDs

Models

PCN

Change of Production Location for 3mm and TELUX Devices (PDF)

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Environmental Documents

REACH Certificate (PDF)

Product Compliance

USHTS:: 8541410000
CNHTS:: 8541410000
CAHTS:: 8541400010
JPHTS:: 8541400103
TARIC:: 8541409090
MXHTS:: 8541410100
BRHTS:: 85414011
ECCN:: EAR99

Vishay Semiconductors SurfLight™ Infrared (IR) Emitters feature 850nm or 940nm peak wavelength, GaAlAs surface emitter chip technology, high radiant power, high optical power, and high speed. SurfLight IR emitters have gullwing or reverse gullwing terminal configurations and are suitable for high pulse current operation. The 940nm IR emitters have a narrower half-degree angle of intensity and better response times for applications. These Vishay compared to the previous generation of IR emitters.

IR Emitters & Silicon PIN Photodiode

Vishay Semiconductors IR Emitters & Silicon PIN Photodiodes are high-speed 830nm to 950nm infrared emitters and package-matched high-speed silicon PIN photodiodes with high radiant sensitivity from 1mW/sr to 1800 mW/sr. Rise and fall times range from 2.5ns to 1000ns. Vishay offers double heterojunction infrared emitters with the lowest forward voltages on the market and highly efficient homojunction emitters. Vishay also offers the broadest selection of high-speed, low dark current PIN photodiodes that are specifically designed to achieve excellent sensitivity together with high reliability.

High-Power, High-Speed Infrared Emitters

Vishay VSMB294x/VSMY2853 High-Speed, High-Power Infrared Emitters consist of an adapted lens radius to provide wide ±25° and ±28° angles of half intensity. The resulting typical radiant intensity ranges from 20mW/sr to 35mW/sr at a 100mA drive current. Saving space over lensed PLCC2 solutions, the IR emitters are available in compact top-view 2.3mm x 2.3mm x 2.5mm gullwing and reverse gullwing packages, and 2.3mm x 2.55mm x 2.3mm side-view packages. These offer fast switching speeds and low forward voltages, as the Vishay devices feature GaAIAs surface emitter chip (VSMY2853), double hetero (VSMF2893), and multi-quantum well (VSMB2943, VSMB2948) technologies.

VSLY850 High Speed IR Emitting Diodes

Vishay Semiconductors VSLY850 High Speed IR Emitting Diodes are infrared, 850nm emitting diodes based on GaAlAs surface emitter chip technology. Vishay Semiconductors VSLY850 High Speed IR Emitting Diodes have extreme high radiant intensity, high optical power, high speed, and are molded in clear, untinted plastic packages. The VSLY3850 comes in a T-1 plastic package, and the VSLY5850 also has a parabolic lens.

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