TSAL6100

Vishay Semiconductors
782-TSAL6100

TSAL6100

Mfr.:

Description:
Infrared Emitters - High Power 940nm, T-1.75 170mW/sr, +/-10deg.

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In Stock: 46,124

Stock:

46,124 Can Ship Immediately

Factory Lead-Time:

17 Weeks Estimated factory production time for quantities greater than shown.
 
Minimum: 1   Multiples: 1

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Pricing (USD)

Qty. Unit Price
Ext. Price
$0.44 $0.44
$0.306 $3.06
$0.188 $18.80
$0.14 $140.00
$0.122 $488.00
$0.12 $960.00
Product Attribute Attribute Value
Vishay
Product Category: Infrared Emitters - High Power
RoHS:  Details
Through Hole
940 nm
130 mW/sr
10 deg
100 mA
1.35 V
210 mW
- 55 C
+ 100 C
Bulk
Brand: Vishay Semiconductors
Fall Time: 800 ns
Height: 8.7 mm
Illumination Color: Infrared
Length: 5.8 mm
Lens Dimensions: 5 mm x 5 mm x 7.7 mm
Lens Shape: Circular
Product Type: IR Emitters (IR LEDs)
Rise Time: 800 ns
Series: TSAL
Factory Pack Quantity: 4000
Subcategory: Infrared Data Communications
Viewing Angle: 10 deg
Vr - Reverse Voltage: 5 V
Width: 5.8 mm
Unit Weight: 0.009877 oz
                    
Description of Change: The infrared emitter chip of affected products
will be replaced. The new used emitter chip technology has a faster
switching speed (15ns vs 800ns). All other characteristics will be
kept along with the datasheet specification.

Please contact a Mouser Technical Sales Representative for further
information.

5-0514-27
USHTS:
8541100080
CNHTS:
8541410000
TARIC:
8541401000
CAHTS:
8541100090
JPHTS:
854110090
KRHTS:
8541109000
MXHTS:
8541100101
ECCN:
EAR99

IR Emitters & Silicon PIN Photodiode

Vishay Semiconductors IR Emitters & Silicon PIN Photodiodes are high-speed 830nm to 950nm infrared emitters and package-matched high-speed silicon PIN photodiodes with high radiant sensitivity from 1mW/sr to 1800 mW/sr. Rise and fall times range from 2.5ns to 1000ns. Vishay offers double heterojunction infrared emitters with the lowest forward voltages on the market and highly efficient homojunction emitters. Vishay also offers the broadest selection of high-speed, low dark current PIN photodiodes that are specifically designed to achieve excellent sensitivity together with high reliability.

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