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SI4936CDY-T1-GE3

Vishay Semiconductors
781-SI4936CDY-GE3

SI4936CDY-T1-GE3

Mfr.:

Description:
MOSFET 30V Vds 20V Vgs SO-8

ECAD Model:
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In Stock: 9,300

Stock:

9,300
Can Ship Immediately

On Order:

2,500
Expected 22-Jul-24
2,500
Expected 10-Jan-25

Factory Lead-Time:

43
Weeks Estimated factory production time for quantities greater than shown.
 
Minimum: 1   Multiples: 1

$-.--
$-.--
Full Reel (Order in multiples of 2500)
Cut Tape
MouseReel™ (+$7.00)

Pricing (USD)

Qty. Unit Price
Ext. Price
Cut Tape / MouseReel™
$0.61 $0.61
$0.533 $5.33
$0.384 $38.40
$0.313 $156.50
$0.259 $259.00
Full Reel (Order in multiples of 2500)
$0.231 $577.50
$0.229 $1,145.00
† $7.00 MouseReel™ fee will be added and calculated in your shopping cart. All MouseReel™ orders are non-cancellable and non-returnable.
Product Attribute Attribute Value
Vishay
Product Category: MOSFET
RoHS:  Details
Si
SMD/SMT
SOIC-8
N-Channel
2 Channel
30 V
5.8 A
40 mOhms
- 20 V, + 20 V
3 V
9 nC
- 55 C
+ 150 C
2.3 W
Enhancement
TrenchFET
SI4
Reel
Cut Tape
MouseReel
Brand: Vishay Semiconductors
Configuration: Dual
Height: 1.75 mm
Length: 4.9 mm
Product Type: MOSFET
Factory Pack Quantity: 2500
Subcategory: MOSFETs
Width: 3.9 mm
Part # Aliases: SI4936CDY-GE3
Unit Weight: 0.006596 oz
USHTS:
8541290095
CNHTS:
8541290000
TARIC:
8541290000
CAHTS:
8541290000
JPHTS:
8541290100
KRHTS:
8541299000
MXHTS:
85412999
ECCN:
EAR99

Si4 TrenchFET® Power MOSFETs

Vishay / Siliconix Si4 TrenchFET® Power MOSFETs are used for amplifying electronic signals. These devices are available in N-channel, P-channel, and N- and P-channel versions. The Si4 MOSFETs offer different VGS and VDS options and temperature ranges. Vishay / Siliconix Si4 TrenchFET Power MOSFETs operate in an enhancement mode and are used for switching between electronic signals. These surface-mount MOSFETs are 100% Rand UIS tested.

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