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SI4936CDY-T1-GE3

Name: Vishay SI4936CDY-T1-GE3
Brand: Vishay Semiconductors
SKU: 781-SI4936CDY-GE3
Price: 0.61 USD
Availability: InStock

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Mouser #:

781-SI4936CDY-GE3

Mfr. #:

SI4936CDY-T1-GE3

Description:

MOSFET 30V Vds 20V Vgs SO-8

Datasheet:

SI4936CDY-T1-GE3 Datasheet

ECAD Model:

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Learn more about Vishay Semiconductors SI4936CDY-T1-GE3

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In Stock: 9,300

Stock:: 9,300

Can Ship Immediately

Shipping Restricted
On Order:: 2,500

Expected 10-Jan-25
Factory Lead-Time:: 43

Weeks Estimated factory production time for quantities greater than shown.

Minimum: 1 Multiples: 1

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Unit Price:

$-.--

Ext. Price:

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Packaging:

Full Reel (Order in multiples of 2500)

Cut Tape

MouseReel™ (+$7.00)

Pricing (USD)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	$0.61	$0.61
	$0.533	$5.33
	$0.384	$38.40
	$0.313	$156.50
	$0.259	$259.00
Full Reel (Order in multiples of 2500)
	$0.231	$577.50
	$0.229	$1,145.00

† $7.00 MouseReel™ fee will be added and calculated in your shopping cart. All MouseReel™ orders are non-cancellable and non-returnable. ↩

Specifications

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Vishay
Product Category:	MOSFET
RoHS:	Details
Technology:	Si
Mounting Style:	SMD/SMT
Package / Case:	SOIC-8
Transistor Polarity:	N-Channel
Number of Channels:	2 Channel
Vds - Drain-Source Breakdown Voltage:	30 V
Id - Continuous Drain Current:	5.8 A
Rds On - Drain-Source Resistance:	40 mOhms
Vgs - Gate-Source Voltage:	- 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage:	3 V
Qg - Gate Charge:	9 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	2.3 W
Channel Mode:	Enhancement
Tradename:	TrenchFET
Series:	SI4
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Vishay Semiconductors
Configuration:	Dual
Height:	1.75 mm
Length:	4.9 mm
Product Type:	MOSFET
Factory Pack Quantity:	2500
Subcategory:	MOSFETs
Width:	3.9 mm
Part # Aliases:	SI4936CDY-GE3
Unit Weight:	0.006596 oz

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Attributes selected: 0

Documents (11)

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Datasheet

SI4936CDY-T1-GE3 Datasheet

Application Notes

Mounting LITTLE FOOT‚ SO-8 Power MOSFETs

Models

Technical Resources

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Environmental Documents

REACH Certificate (PDF)

Product Compliance

USHTS:: 8541290095
CNHTS:: 8541290000
TARIC:: 8541290000
CAHTS:: 8541290000
JPHTS:: 8541290100
KRHTS:: 8541299000
MXHTS:: 85412999
ECCN:: EAR99

Vishay / Siliconix Si4 TrenchFET® Power MOSFETs are used for amplifying electronic signals. These devices are available in N-channel, P-channel, and N- and P-channel versions. The Si4 MOSFETs offer different V_GS and V_DS options and temperature ranges. Vishay / Siliconix Si4 TrenchFET Power MOSFETs operate in an enhancement mode and are used for switching between electronic signals. These surface-mount MOSFETs are 100% R_gand UIS tested.

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