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SI4925DDY-T1-GE3

Name: Vishay SI4925DDY-T1-GE3
Brand: Vishay Semiconductors
SKU: 781-SI4925DDY-GE3
Price: 0.95 USD
Availability: InStock

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Mouser #:

781-SI4925DDY-GE3

Mfr. #:

SI4925DDY-T1-GE3

Description:

MOSFET -30V Vds 20V Vgs SO-8

Datasheet:

SI4925DDY-T1-GE3 Datasheet

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In Stock: 82,795

Stock:: 82,795 Can Ship Immediately

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Factory Lead-Time:: 59 Weeks Estimated factory production time for quantities greater than shown.

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Packaging:

Full Reel (Order in multiples of 2500)

Cut Tape

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Pricing (USD)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	$0.95	$0.95
	$0.809	$8.09
	$0.631	$63.10
	$0.528	$264.00
	$0.424	$424.00
Full Reel (Order in multiples of 2500)
	$0.392	$980.00
	$0.374	$1,870.00
	$0.356	$3,560.00
	$0.348	$8,700.00

† $7.00 MouseReel™ fee will be added and calculated in your shopping cart. All MouseReel™ orders are non-cancellable and non-returnable. ↩

Specifications

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Vishay
Product Category:	MOSFET
RoHS:	Details
Technology:	Si
Mounting Style:	SMD/SMT
Package / Case:	SOIC-8
Transistor Polarity:	P-Channel
Number of Channels:	2 Channel
Vds - Drain-Source Breakdown Voltage:	30 V
Id - Continuous Drain Current:	8 A
Rds On - Drain-Source Resistance:	29 mOhms
Vgs - Gate-Source Voltage:	- 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage:	1 V
Qg - Gate Charge:	32 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	5 W
Channel Mode:	Enhancement
Tradename:	TrenchFET
Series:	SI4
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Vishay Semiconductors
Configuration:	Dual
Fall Time:	12 ns
Forward Transconductance - Min:	23 S
Height:	1.75 mm
Length:	4.9 mm
Product Type:	MOSFET
Rise Time:	8 ns
Factory Pack Quantity:	2500
Subcategory:	MOSFETs
Transistor Type:	2 P-Channel
Typical Turn-Off Delay Time:	45 ns
Typical Turn-On Delay Time:	10 ns
Width:	3.9 mm
Part # Aliases:	SI4925DDY-GE3
Unit Weight:	0.006596 oz

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Documents (11)

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Datasheet

SI4925DDY-T1-GE3 Datasheet

Application Notes

Mounting LITTLE FOOT‚ SO-8 Power MOSFETs

Models

Technical Resources

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Environmental Documents

REACH Certificate (PDF)

Product Compliance

USHTS:: 8541290095
CNHTS:: 8541290000
TARIC:: 8541290000
CAHTS:: 8541290000
JPHTS:: 8541290100
KRHTS:: 8541299000
MXHTS:: 85412999
ECCN:: EAR99

Vishay / Siliconix Si4 TrenchFET® Power MOSFETs are used for amplifying electronic signals. These devices are available in N-channel, P-channel, and N- and P-channel versions. The Si4 MOSFETs offer different V_GS and V_DS options and temperature ranges. Vishay / Siliconix Si4 TrenchFET Power MOSFETs operate in an enhancement mode and are used for switching between electronic signals. These surface-mount MOSFETs are 100% R_gand UIS tested.

Integrated MOSFET Solutions

Vishay Integrated MOSFET Solutions combine components into a single monolithic chip to increase power density, increase efficiency, simplify design, and reduce Bill of Material (BOM) costs. These single- and multi-die MOSFETs integrate features such as Schottky Barrier diodes and ESD protection. These MOSFETs feature low ON-resistance N- and P-channel TrenchFET^® technologies and low thermal resistance.

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