IRLD120PBF

Vishay Semiconductors Logo
844-IRLD120PBF

IRLD120PBF

Mfr.:

Description:
MOSFET 100V N-CH HEXFET HEXDI

ECAD Model:
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In Stock: 7,987

Stock:

7,987 Can Ship Immediately

Factory Lead-Time:

32 Weeks Estimated factory production time for quantities greater than shown.
 
Minimum: 1   Multiples: 1

$-.--
$-.--

Pricing (USD)

Qty. Unit Price
Ext. Price
1 $1.83 $1.83
10 $1.65 $16.50
25 $1.56 $39.00
100 $1.33 $133.00
500 $1.09 $545.00
1,000 $0.902 $902.00
2,500 $0.875 $2,187.50
Product Attribute Attribute Value
Vishay
Product Category: MOSFET
RoHS:  Details
Si
Through Hole
DIP-4
N-Channel
1 Channel
100 V
1.3 A
270 mOhms
- 10 V, + 10 V
1 V
12 nC
- 55 C
+ 175 C
1.3 W
Enhancement
Tube
Brand: Vishay Semiconductors
Configuration: Single
Fall Time: 27 ns
Forward Transconductance - Min: 1.9 S
Height: 3.37 mm
Length: 6.29 mm
Product Type: MOSFET
Rise Time: 64 ns
Factory Pack Quantity: 2500
Subcategory: MOSFETs
Transistor Type: 1 N-Channel
Typical Turn-Off Delay Time: 21 ns
Typical Turn-On Delay Time: 9.8 ns
Width: 5 mm
Unit Weight: 0.031537 oz

USHTS:
8541290095
CNHTS:
8541290000
CAHTS:
8541290000
JPHTS:
8541290100
KRHTS:
8541299000
TARIC:
8541290000
MXHTS:
85412999
ECCN:
EAR99
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