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IRFR320TRPBF-BE3

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78-IRFR320TRPBF-BE3

IRFR320TRPBF-BE3

Mfr.:

Description:
MOSFET N-CHANNEL 400V

Lifecycle:
New Product: New from this manufacturer.

Datasheet:

ECAD Model:
IRFR320TRPBF-BE3 ECAD Model
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More Information
Learn more about Vishay Semiconductors IRFR320TRPBF-BE3

In Stock: 17,557

Stock:

17,557 Can Ship Immediately

Factory Lead-Time:

28 Weeks Estimated factory production time for quantities greater than shown.
 
Minimum: 1   Multiples: 1

$-.--
$-.--

Pricing (USD)

Qty. Unit Price
Ext. Price
1 $1.80 $1.80
10 $1.62 $16.20
100 $1.31 $131.00
500 $1.07 $535.00
1,000 $0.889 $889.00
2,000 $0.827 $1,654.00
4,000 $0.802 $3,208.00
10,000 $0.77 $7,700.00
Product Attribute Attribute Value
Vishay
Product Category: MOSFET
RoHS:  Details
Si
SMD/SMT
TO-252-3
N-Channel
1 Channel
400 V
3.1 A
1.8 Ohms
- 20 V, + 20 V
2 V
20 nC
- 55 C
+ 150 C
42 W
Enhancement
Bulk
Brand: Vishay Semiconductors
Fall Time: 13 ns
Forward Transconductance - Min: 1.7 S
Product Type: MOSFET
Rise Time: 14 ns
Factory Pack Quantity: 2000
Subcategory: MOSFETs
Transistor Type: 1 N-Channel
Typical Turn-Off Delay Time: 30 ns
Typical Turn-On Delay Time: 10 ns
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USHTS:
8541290095
TARIC:
8541290000
ECCN:
EAR99

TrenchFET® MOSFETs

Vishay / Siliconix TrenchFET® MOSFETs feature P- and N-channel silicon technology enabling these devices to provide excellent on-resistance specifications of 1.9mΩ in the PowerPAK® SO-8. Theses MOSFETs have on-resistance as low as half the level of the next best devices on the market. N-Channel MOSFETs offer a 40V to 250V drain-source breakdown voltage range, 375W power dissipation rating, and ThunderFET power depending on the model. The P-Channel MOSFETs feature up to 2 channels, SMD and through-hole mounting, and a 12V to 200V drain-source breakdown voltage range.

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