UF3C120080K4S

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431-UF3C120080K4S

UF3C120080K4S

Mfr.:

Description:
MOSFET 1200V/80mOhm, SiC, FAST CASCODE, G3, TO-247-4L, REDUCED Rth

ECAD Model:
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In Stock: 807

Stock:

807 Can Ship Immediately

Factory Lead-Time:

44 Weeks Estimated factory production time for quantities greater than shown.
 
Minimum: 1   Multiples: 1

$-.--
$-.--

Pricing (USD)

Qty. Unit Price
Ext. Price
1 $15.94 $15.94
10 $14.65 $146.50
30 $14.31 $429.30
120 $12.37 $1,484.40
510 $11.00 $5,610.00
1,020 $10.44 $10,648.80
2,520 Quote
Product Attribute Attribute Value
UnitedSiC
Product Category: MOSFET
RoHS:  Details
SiC
Through Hole
TO-247-4
N-Channel
1 Channel
1.2 kV
33 A
100 mOhms
- 25 V, + 25 V
6 V
51 nC
- 55 C
+ 175 C
254.2 W
Enhancement
AEC-Q101
SiC FET
Tube
Brand: UnitedSiC
Configuration: Single
Fall Time: 10 ns
Product Type: MOSFET
Rise Time: 13 ns
Series: UF3C
Factory Pack Quantity: 30
Subcategory: MOSFETs
Transistor Type: 1 N-Channel
Typical Turn-Off Delay Time: 43 ns
Typical Turn-On Delay Time: 33 ns
Unit Weight: 0.211644 oz
USHTS:
8541290095
CNHTS:
8541290000
TARIC:
8541290000
ECCN:
EAR99

UF3C SiC FETs

UnitedSiC UF3C High-Performance SiC FETs are cascode Silicon Carbide (SiC) products that co-package high-performance G3 SiC JFETs with a cascode-optimized Si MOSFET to produce a standard gate drive SiC device. This series exhibits ultra-low gate charge and is excellent for switching inductive loads and applications requiring a standard gate drive. The UnitedSiC UF3C SiC FETs are available in 650V, 1200V, and 1700V versions and are offered in TO-247-3L, TO-247-4L, and TO-220-3L packages.

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