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TP90H050WS

Name: Transphorm TP90H050WS
Brand: Transphorm
SKU: 227-TP90H050WS
Price: 17.29 USD
Availability: InStock

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Mouser #:

227-TP90H050WS

Mfr. #:

TP90H050WS

Description:

MOSFET 900V, 50mOhm

Datasheet:

TP90H050WS Datasheet (PDF)

ECAD Model:

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More Information

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In Stock: 331

Stock:: 331

Can Ship Immediately

Shipping Restricted
On Order:: 186
Factory Lead-Time:: 16

Weeks Estimated factory production time for quantities greater than shown.

Minimum: 1 Multiples: 1

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Unit Price:

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Ext. Price:

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Pricing (USD)

Qty.	Unit Price	Ext. Price
	$17.29	$17.29
	$15.23	$152.30
	$15.00	$450.00
	$14.54	$872.40
	$13.16	$1,579.20
	$12.94	$3,493.80
	$11.93	$6,084.30
	$11.38	$11,607.60
2,520	Quote

Specifications

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Transphorm
Product Category:	MOSFET
RoHS:	Details
Technology:	GaN
Mounting Style:	Through Hole
Package / Case:	TO-247-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	900 V
Id - Continuous Drain Current:	34 A
Rds On - Drain-Source Resistance:	63 mOhms
Vgs - Gate-Source Voltage:	- 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage:	3.4 V
Qg - Gate Charge:	17.5 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	119 W
Channel Mode:	Enhancement
Packaging:	Tube
Brand:	Transphorm
Configuration:	Single
Fall Time:	10 ns
Product Type:	MOSFET
Rise Time:	11 ns
Factory Pack Quantity:	30
Subcategory:	MOSFETs
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	60 ns
Typical Turn-On Delay Time:	62 ns
Unit Weight:	0.211644 oz

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Documents (3)

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Datasheet

TP90H050WS Datasheet (PDF)

Application Notes

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Product Compliance

USHTS:: 8541290095
CNHTS:: 8541290000
TARIC:: 8541290000
ECCN:: EAR99

Transphorm 900V 170mΩ Gallium Nitride (GaN) FET is a normally-off device that offers superior reliability and performance. The device combines state-of-the-art high voltage GaN HEMT and low voltage silicon MOSFET technologies. Transphorm GaN offers improved efficiency over silicon, through lower gate charge, crossover loss, and smaller reverse recovery charge. The device is housed in a 3-lead TO-220 with a common source package configuration.

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