TP65H150G4PS

Transphorm Logo
227-TP65H150G4PS

TP65H150G4PS

Mfr.:

Description:
MOSFET GAN FET 650V 13A TO220

Lifecycle:
New Product: New from this manufacturer.
ECAD Model:
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In Stock: 588

Stock:

588 Can Ship Immediately

Factory Lead-Time:

14 Weeks Estimated factory production time for quantities greater than shown.
 
Minimum: 1   Multiples: 1

$-.--
$-.--

Pricing (USD)

Qty. Unit Price
Ext. Price
1 $9.58 $9.58
10 $8.66 $86.60
50 $8.25 $412.50
100 $7.16 $716.00
500 $6.23 $3,115.00
1,000 $5.30 $5,300.00
2,500 Quote
Product Attribute Attribute Value
Transphorm
Product Category: MOSFET
RoHS:  Details
GaN
SMD/SMT
TO-220-3
N-Channel
1 Channel
650 V
13 A
180 mOhms
- 20 V, + 20 V
4.8 V
8 nC
- 55 C
+ 150 C
52 W
Enhancement
Brand: Transphorm
Configuration: Single
Fall Time: 8 ns
Product Type: MOSFET
Rise Time: 5.2 ns
Series: Gen IV
Factory Pack Quantity: 50
Subcategory: MOSFETs
Typical Turn-Off Delay Time: 48 ns
Typical Turn-On Delay Time: 37.8 ns

USHTS:
8541290095
TARIC:
8541290000
ECCN:
EAR99

Gen IV SuperGaN® FETs

Transphorm Gen IV SuperGaN® FETs are normally-off devices that enable the AC-DC bridgeless totem-pole PFC designs. These FETs feature a high voltage GaN High Electron Mobility Transistor (HEMT) with a low voltage silicon MOSFET and offer superior reliability and performance. The Gen IV SuperGaN® platform comes with advanced epi and patented design technologies that simplify manufacturability. This design technology improves efficiency over silicon with a low gate charge, output capacitance, crossover loss, and reverse recovery charge. These Gen IV FETs are available in two variants like TP65H035G4WS which comes in a 3-lead TO-247 package and TP65H300G4LSG which comes in an 8x8 PQFN package.

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