TP65H300G4LSG

227-TP65H0300G4LSG

TP65H300G4LSG

Mfr.:
Transphorm

Description:
MOSFET GAN FET 650V 6.5A PQFN88

Lifecycle:
Part Number Change: Part number revision only. The manufacturer has changed this part number. This is the previous part number.
ECAD Model:
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Availability

Stock:

Not Available
Product Attribute Attribute Value
Transphorm
Product Category: MOSFET
RoHS:  Details
GaN
SMD/SMT
PQFN-8x8-3
N-Channel
1 Channel
650 V
6.5 A
312 mOhms
- 18 V, + 18 V
2.6 V
9.6 nC
- 55 C
+ 150 C
21 W
Enhancement
SuperGaN
Tube
Brand: Transphorm
Fall Time: 10 ns
Moisture Sensitive: Yes
Product Type: MOSFET
Rise Time: 3.4 ns
Series: TP65H
Factory Pack Quantity: 50
Subcategory: MOSFETs
Transistor Type: 1 N-Channel
Typical Turn-Off Delay Time: 53 ns
Typical Turn-On Delay Time: 19.4 ns
Unit Weight: 0.144465 oz

USHTS:
8541290095
CNHTS:
8541290000
TARIC:
8541290000
ECCN:
EAR99

Gen IV SuperGaN® FETs

Transphorm Gen IV SuperGaN® FETs are normally-off devices that enable the AC-DC bridgeless totem-pole PFC designs. These FETs feature a high voltage GaN High Electron Mobility Transistor (HEMT) with a low voltage silicon MOSFET and offer superior reliability and performance. The Gen IV SuperGaN® platform comes with advanced epi and patented design technologies that simplify manufacturability. This design technology improves efficiency over silicon with a low gate charge, output capacitance, crossover loss, and reverse recovery charge. These Gen IV FETs are available in two variants like TP65H035G4WS which comes in a 3-lead TO-247 package and TP65H300G4LSG which comes in an 8x8 PQFN package.

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