TP65H070G4LSGB-TR

TP65H070G4LSGB 650V SuperGaN® GaN FET

Transphorm TP65H070G4LSGB 650V SuperGaN® Gallium Nitride (GaN) FET is a 650V, 70mΩ normally-off device offering superior quality and performance. TP65H070G4LSGB combines state-of-the-art high-voltage GaN HEMT and low-voltage silicon MOSFET technologies in an 8mm x 8mm PQFN package. Operating within a -55°C to +150°C temperature range, this component features 96W maximum power dissipation, an 18.4A to 29A maximum continuous drain current range, and a 120A pulsed drain current (maximum). The Gen IV SuperGaN® platform uses advanced epi and patented design technologies to simplify manufacturability while improving efficiency over silicon via lower gate charge, output capacitance, crossover loss, and reverse recovery charge.