TP65H050G4WS

Transphorm
227-TP65H050G4WS

TP65H050G4WS

Mfr.:

Description:
MOSFET GAN FET 650V 34A TO247

Lifecycle:
New Product: New from this manufacturer.

Datasheet:

ECAD Model:
TP65H050G4WS ECAD Model
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More Information
Learn more about Transphorm TP65H050G4WS

In Stock: 824

Stock:

824 Can Ship Immediately

Factory Lead-Time:

16 Weeks Estimated factory production time for quantities greater than shown.
 
Minimum: 1   Multiples: 1

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Pricing (USD)

Qty. Unit Price
Ext. Price
$15.64 $15.64
$14.38 $143.80
$13.78 $413.40
$12.13 $1,455.60
$10.79 $5,502.90
$9.81 $10,006.20
2,520 Quote
Product Attribute Attribute Value
Transphorm
Product Category: MOSFET
RoHS:  Details
GaN
SMD/SMT
TO-247-3
N-Channel
1 Channel
650 V
34 A
60 mOhms
- 20 V, + 20 V
4.8 V
24 nC
- 55 C
+ 150 C
119 W
Enhancement
Bulk
Brand: Transphorm
Configuration: Single
Fall Time: 10.9 ns
Product Type: MOSFET
Rise Time: 11.3 ns
Factory Pack Quantity: 30
Subcategory: MOSFETs
Typical Turn-Off Delay Time: 88.3 ns
Typical Turn-On Delay Time: 49.2 ns

Datasheet

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USHTS:
8541290095
TARIC:
8541290000
ECCN:
EAR99

650V 34A GaN FETs

Transphorm 650V 34A GaN (Gallium Nitride) FETs are normally-off devices using Transphorm's Gen IV platform. The FETs combine a high voltage GaN HEMT with a low voltage silicon MOSFET. The Gen IV SuperGaN® platform uses advanced epi and patented design technologies to simplify manufacturability while improving efficiency over silicon via lower gate charge, output capacitance, crossover loss, and reverse recovery charge. GaN FETs have inherently superior performance over traditional silicon FETs, offering faster switching and better thermal performance.

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