TP65H050G4BS

Transphorm
227-TP65H050G4BS

TP65H050G4BS

Mfr.:

Description:
MOSFET 650V, 50mOhm

Lifecycle:
New Product: New from this manufacturer.

Datasheet:

ECAD Model:
TP65H050G4BS ECAD Model
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In Stock: 283

Stock:

283 Can Ship Immediately

Factory Lead-Time:

36 Weeks Estimated factory production time for quantities greater than shown.
 
Minimum: 1   Multiples: 1

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Pricing (USD)

Qty. Unit Price
Ext. Price
$13.66 $13.66
$13.22 $132.20
$11.23 $561.50
$10.59 $1,059.00
$9.42 $4,710.00
$8.56 $8,560.00
2,500 Quote
Product Attribute Attribute Value
Transphorm
Product Category: MOSFET
RoHS:  Details
GaN
SMD/SMT
TO-263-3
N-Channel
1 Channel
650 V
34 A
60 mOhms
- 20 V, + 20 V
4.8 V
16 nC
- 55 C
+ 150 C
119 W
Enhancement
Bulk
Brand: Transphorm
Fall Time: 10.9 ns
Product Type: MOSFET
Rise Time: 11.3 ns
Factory Pack Quantity: 50
Subcategory: MOSFETs
Typical Turn-Off Delay Time: 88.3 ns
Typical Turn-On Delay Time: 49.2 ns

Datasheet

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USHTS:
8541290095
TARIC:
8541290000
ECCN:
EAR99

650V 34A GaN FETs

Transphorm 650V 34A GaN (Gallium Nitride) FETs are normally-off devices using Transphorm's Gen IV platform. The FETs combine a high voltage GaN HEMT with a low voltage silicon MOSFET. The Gen IV SuperGaN® platform uses advanced epi and patented design technologies to simplify manufacturability while improving efficiency over silicon via lower gate charge, output capacitance, crossover loss, and reverse recovery charge. GaN FETs have inherently superior performance over traditional silicon FETs, offering faster switching and better thermal performance.

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