TP65H035G4WS

Transphorm
227-TP65H035G4WS

TP65H035G4WS

Mfr.:

Description:
MOSFET 650V, 35mOhm

Datasheet:

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In Stock: 397

Stock:

397 Can Ship Immediately

Factory Lead-Time:

16 Weeks Estimated factory production time for quantities greater than shown.
 
Minimum: 1   Multiples: 1

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Pricing (USD)

Qty. Unit Price
Ext. Price
$18.65 $18.65
$17.15 $171.50
$14.47 $1,736.40
$12.87 $6,563.70
1,020 Quote
Product Attribute Attribute Value
Transphorm
Product Category: MOSFET
RoHS:  Details
GaN
Through Hole
TO-247-3
N-Channel
1 Channel
650 V
46.5 A
41 mOhms
- 20 V, + 20 V
4.8 V
22 nC
- 55 C
+ 150 C
156 W
Enhancement
SuperGaN
TP65H
Tube
Brand: Transphorm
Fall Time: 10 ns
Product Type: MOSFET
Rise Time: 10 ns
Factory Pack Quantity: 30
Subcategory: MOSFETs
Transistor Type: 1 N-Channel
Typical Turn-Off Delay Time: 94 ns
Typical Turn-On Delay Time: 60 ns
Unit Weight: 0.211644 oz

Datasheet

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USHTS:
8541290095
CNHTS:
8541290000
TARIC:
8541290000
ECCN:
EAR99

650V GaN FETs in TO-247 Packages

Transphorm 650V GaN FETs in TO-247 Packages combine state-of-the-art high-voltage GaN HEMT and low-voltage silicon MOSFET technologies. The devices offer superior reliability and performance with improved efficiency over silicon. The FETs have a lower gate charge, lower crossover loss, and a smaller reverse recovery charge.

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