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TP65H015G5WS

Name: Transphorm TP65H015G5WS
Brand: Transphorm
SKU: 227-TP65H015G5WS
Price: 32.26 USD
Availability: InStock

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Mouser #:

227-TP65H015G5WS

Mfr. #:

TP65H015G5WS

Description:

MOSFET GAN FET 650V 95A TO2 47

Datasheet:

TP65H015G5WS Datasheet (PDF)

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In Stock: 534

Stock:: 534 Can Ship Immediately

Shipping Restricted
Factory Lead-Time:: 16 Weeks Estimated factory production time for quantities greater than shown.

Minimum: 1 Multiples: 1

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Pricing (USD)

Qty.	Unit Price	Ext. Price
	$32.26	$32.26
	$28.67	$286.70
	$27.60	$828.00
	$27.13	$1,627.80
	$25.07	$3,008.40
	$23.39	$6,315.30
	$22.45	$11,449.50

Specifications

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Transphorm
Product Category:	MOSFET
RoHS:	Details
Technology:	GaN
Mounting Style:	Through Hole
Package / Case:	TO-247-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	650 V
Id - Continuous Drain Current:	95 A
Rds On - Drain-Source Resistance:	18 mOhms
Vgs - Gate-Source Voltage:	- 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage:	4 V
Qg - Gate Charge:	68 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	276 W
Channel Mode:	Enhancement
Packaging:	Tube
Brand:	Transphorm
Configuration:	Single
Fall Time:	10 ns
Product Type:	MOSFET
Rise Time:	20 ns
Factory Pack Quantity:	30
Subcategory:	MOSFETs
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	132 ns
Typical Turn-On Delay Time:	78 ns

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Datasheet

TP65H015G5WS Datasheet (PDF)

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Product Compliance

USHTS:: 8541290095
CNHTS:: 8541290000
TARIC:: 8541290000
ECCN:: EAR99

Transphorm 650V GaN FETs in TO-247 Packages combine state-of-the-art high-voltage GaN HEMT and low-voltage silicon MOSFET technologies. The devices offer superior reliability and performance with improved efficiency over silicon. The FETs have a lower gate charge, lower crossover loss, and a smaller reverse recovery charge.

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