TPN8R903NL,LQ

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757-TPN8R903NLLQ

TPN8R903NL,LQ

Mfr.:

Description:
MOSFET N-Ch DTMOS VII-H 22W 630pF 37A 30V

Datasheet:

ECAD Model:
TPN8R903NL,LQ ECAD Model
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Availability

Stock:

0
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On Order:

20,312
Expected 08-Aug-22

Factory Lead-Time:

64
Weeks Estimated factory production time for quantities greater than shown.
 
Minimum: 1   Multiples: 1

$-.--
$-.--
Full Reel (Order in multiples of 3000)
Cut Tape
MouseReel™ (+$7.00)

Pricing (USD)

Qty. Unit Price
Ext. Price
Cut Tape / MouseReel™ †
1 $0.70 $0.70
10 $0.58 $5.80
100 $0.488 $48.80
250 $0.474 $118.50
500 $0.374 $187.00
1,000 $0.30 $300.00
Full Reel (Order in multiples of 3000)
3,000 $0.289 $867.00
† $7.00 MouseReel™ fee will be added and calculated in your shopping cart. All MouseReel™ orders are non-cancellable and non-returnable. ↩
Product Attribute Attribute Value
Toshiba
MOSFET
RoHS:  Details
Si
SMD/SMT
TSON-8
N-Channel
1 Channel
30 V
37 A
10.2 mOhms
- 20 V, + 20 V
2.3 V
9.8 nC
- 55 C
+ 150 C
22 W
Enhancement
U-MOSVIII-H
Reel
Cut Tape
MouseReel
Brand: Toshiba
Configuration: Single
Fall Time: 2.1 ns
Height: 0.85 mm
Length: 3.1 mm
Product Type: MOSFET
Rise Time: 2.4 ns
Series: TPN8R903NL
Factory Pack Quantity: 3000
Subcategory: MOSFETs
Transistor Type: 1 N-Channel
Typical Turn-Off Delay Time: 14 ns
Typical Turn-On Delay Time: 8.3 ns
Width: 3.1 mm
Unit Weight: 0.000705 oz
USHTS:
8541290095
CNHTS:
8541290000
CAHTS:
8541290000
JPHTS:
8541290100
KRHTS:
8541299000
TARIC:
8541290000
MXHTS:
85412999
ECCN:
EAR99

U-MOSVIII-H Low Voltage High Efficiency MOSFETs

Toshiba U-MOSVIII-H Low Voltage High-Efficiency MOSFETs are specifically designed for use in the secondary side of AC-DC power supplies for notebook PC adapters, game consoles, servers, desktop PCs, flat-panel displays, and more. They are also designed for use in DC-DC power supplies for communication equipment, servers, and data centers. Toshiba U-MOSVIII-H Low Voltage High-Efficiency MOSFETs are fabricated with the latest Gen 8 trench MOS process, which helps to improve the efficiency of power supplies. Other features include low drain-source on-resistance, low leakage current, and high avalanche ruggedness. The series also includes automotive-qualified MOSFETs in a small package.

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